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Infineon OptiMOS 5 N-Channel MOSFET 58 A 100 V 8-Pin PQFN ISZ0804NLSATMA1

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Infineon OptiMOS 5 N-Channel MOSFET 58 A 100 V 8-Pin PQFN ISZ0804NLSATMA1

Name: Infineon OptiMOS 5 N-Channel MOSFET 58 A 100 V 8-Pin PQFN ISZ0804NLSATMA1
Brand: Infineon
SKU: 339378
Price: 0.93 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	3.4mm
Length	3.4mm
Model	ISZ0804NLSATMA1
Width	1.1mm
Mount Type	Surface
Series	OptiMOS 5
Maximum Operating Temperature	175°C
Package Type	PQFN
Minimum Operating Temperature	-55°C
Pin Count	8
Channel Type	N
Maximum Continuous Drain Current Id	58A
Maximum Drain Source Voltage Vds	100V
Maximum Drain Source Resistance Rds	15.5mΩ
Maximum Power Dissipation Pd	60W
Typical Gate Charge Qg @ Vgs	24nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1V

Key Features

Designed for USB Power Delivery and adapter applications.
Features low voltage operation with excellent thermal behavior.
100% avalanche tested for quality assurance.
Compact PQFN 3.3x3.3 mm package enables space-saving designs.
Optimized for fast ramp-up and reduced bill of materials.
Maximum power dissipation rating of 60 W.
Typical gate charge of 24 nC at Vgs, suitable for efficient switching.
Operating temperature range from -55°C to 175°C.

Product Description

Infineon ISZ0804NLSATMA1 is a Power MOSFET from the OptiMOS 5 series designed to support high power efficiency with a continuous drain current rating of 58 A and drain-source voltage of 100 V. This N-Channel MOSFET comes in an 8-Pin PQFN package sized 3.4 mm by 3.4 mm, offering compactness and ease of mounting on surface-mount technology (SMT) printed circuit boards.

Its rugged design meets electrical and thermal demands in USB Power Delivery and power adapter applications, supporting compact and cost-effective power solutions. The device features excellent thermal behavior, enabling reliable operation up to a maximum of 175°C, while also supporting a low minimum temperature of -55°C for demanding industrial environments.

The MOSFET is 100% avalanche tested, reflecting strong quality standards essential for industrial, electronic, and power management applications. It shows a typical gate charge of 24 nC at gate-source voltage, allowing efficient switching performance for power conversion. The forward voltage of 1 V contributes to minimizing conduction losses.

This PQFN package design (Lead frame Quad Flat No-leads) measures 3.4 mm in length and height, and 1.1 mm width, providing a low-profile footprint ideal for space-constrained designs. The maximum drain-source resistance is 15.5 milliohms, supporting efficient current flow with reduced power dissipation.

Designed for USB-PD and power adapter applications. Low voltage operation with fast ramp-up. Excellent thermal performance and reliability. Compact 8-Pin PQFN package for surface mounting. High current capacity with 58 A continuous drain current.

Wide operating temperature from -55°C to 175°C. 100% avalanche tested ensuring quality and robustness. Typical gate charge of 24 nC for efficient switching. Maximum power dissipation rated at 60 W. Optimized for reduced bill of materials and cost-effective designs.

This MOSFET suits industrial power electronics, USB power delivery modules, adapters, and other applications requiring high efficiency and compact packaging. For additional design support, 3D models, schematics, and footprints are available via DesignSpark software.

Explore more reliable MOSFETs and discrete semiconductor components with Infineon and other leading brands at EnvMart.