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Toshiba Silicon Junction Switching Diode, Single, 300 mA, 85 V, Surface Mount SC-59 Package 1SS193(TE85L,F)

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Toshiba Silicon Junction Switching Diode, Single, 300 mA, 85 V, Surface Mount SC-59 Package 1SS193(TE85L,F)

Name: Toshiba Silicon Junction Switching Diode, Single, 300 mA, 85 V, Surface Mount SC-59 Package 1SS193(TE85L,F)
Brand: Toshiba
SKU: 338991
Price: 0.05 USD
Availability: InStock

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Category Switching Diodes Brand Toshiba Condition New

Specifications

Country of Origin	Japan
Brand	Toshiba
Height	1.1mm
Length	2.9mm
Model	1SS193(TE85L,F)
Width	1.5mm
Mount Type	Surface
Maximum Operating Temperature	125°C
Package Type	SC-59
Sub Type	Silicon Junction
Minimum Operating Temperature	-55°C
Pin Count	3
Maximum Power Dissipation Pd	150mW
Diode Configuration	Single
Peak Non-Repetitive Forward Surge Current Ifsm	2A
Maximum Forward Voltage Vf	1.2V
Peak Reverse Recovery Time trr	4ns
Maximum Forward Current If	300mA
Maximum Peak Reverse Repetitive Voltage Vrrm	85V

Key Features

The diode supports a maximum forward current of 300 mA.
It features a maximum peak reverse repetitive voltage of 85 V.
Maximum forward voltage drop of 1.2 V ensures efficient operation.
Capable of peak non-repetitive forward surge current of 2 A.
Maximum power dissipation rating of 150 mW for reliable performance under load.
Peak reverse recovery time is 4 nanoseconds, ideal for high-speed switching.
Operating temperature ranges from -55°C up to 125°C.
Designed and manufactured in Japan maintaining quality standards.

Product Description

Toshiba 1SS193(TE85L,F) Silicon Junction Switching Diode is a high-performance surface-mount diode suited for various electronic switching applications in industrial and commercial environments.

This diode features a single silicon junction configuration with a maximum forward current of 300 mA and a peak reverse repetitive voltage of 85 V, ensuring robust operation in low to moderate power circuits.

The 3-pin SC-59 package provides a compact form factor of 2.9 mm length, 1.5 mm width, and 1.1 mm height, making it ideal for densely populated printed circuit boards (PCB). Its maximum forward voltage of 1.2 V and peak non-repetitive forward surge current of 2 A support reliability during transient surges.

The device’s power dissipation rating of 150 mW and fast peak reverse recovery time of 4 nanoseconds enable efficient switching performance with minimal losses. It operates reliably within a temperature range of -55°C to 125°C, suitable for diverse environmental conditions.

Manufactured in Japan, this diode complies with Toshiba’s quality standards and is a trusted component for electronic designers and engineers. The diode supports a maximum forward current of 300 mA. It features a maximum peak reverse repetitive voltage of 85 V.

Maximum forward voltage drop of 1.2 V ensures efficient operation. Capable of peak non-repetitive forward surge current of 2 A. Maximum power dissipation rating of 150 mW for reliable performance under load. Peak reverse recovery time is 4 nanoseconds, ideal for high-speed switching.

Operating temperature ranges from -55°C up to 125°C. Compact dimensions: 2.9 mm length, 1.5 mm width, and 1.1 mm height. Designed and manufactured in Japan maintaining quality standards.

This Toshiba 1SS193(TE85L,F) diode is widely used in industrial electronics, power management, telecommunications equipment, and consumer electronics where reliable switching performance is critical.

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