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| Country of Origin | China |
|---|---|
| Diameter | 4.8mm |
| Brand | ams OSRAM |
| Height | 5.5mm |
| Length | 5.6mm |
| Wavelength | 350 to 1100 nm |
| Model | BPX 65 |
| Packaging | Tape & Reel |
| Width | 5.6mm |
| Mount Type | Through Hole |
| Short Circuit Current | 10μA |
| Maximum Operating Temperature | 100°C |
| Package Type | TO-18 |
| Minimum Operating Temperature | -40°C |
| Polarity | Forward |
| Dark Current | 2nA |
| Open Circuit Voltage | 330mV |
| Standards/Approvals | RoHS |
| Number of Pins | 2 |
| Typical Fall Time | 12ns |
| Wavelength of Peak Sensitivity | 850nm |
| Spectrums Detected | Ultraviolet, Infrared, Visible Light |
| Breakdown Voltage | 16V |
| Minimum Wavelength Detected | 350nm |
| Maximum Wavelength Detected | 1100nm |
| Angle of Half Sensitivity | 80 ° |
ams OSRAM BPX 65 is a high-performance ultraviolet, infrared, and visible light photodiode designed for industrial electronics, high-speed photodetector applications and control or drive circuits requiring fast response times and reliable operation.
The device features a TO-18 hermetically sealed metal can package that makes it ideal for use in harsh environments with operating temperatures from -40°C to 100°C. The through-hole mounting design enables easy integration into various electronic assemblies.
Covering a broad spectral range from 350 nm to 1100 nm with a peak sensitivity wavelength of 850 nm, the BPX 65 supports a wide range of light detection applications, including optical sensing and measurement.
Thanks to its short switching times with typical rise and fall times of 12 nanoseconds, this photodiode supports fast, reliable signal conversion. Its low dark current of 2 nA and short circuit current of 10 μA ensure minimal noise interference and enhanced signal accuracy.
The compact size with a diameter of 4.8 mm, and dimensions around 5.6 mm width and 5.5 mm height, along with an 80° angle of half sensitivity, facilitate effective light capture within a small form factor.
Additional features include forward polarity, breakdown voltage of 16 V, and open circuit voltage of 330 mV. The product complies with RoHS standards and is manufactured in China. This photodiode from ams OSRAM is suitable for industrial, laboratory, automation, and commercial electronics projects needing a durable, versatile photodetection component.
The device detects ultraviolet, infrared, and visible light spectrums extending from 350nm to 1100nm in wavelength. It features a hermetically sealed TO-18 metal can package suitable for harsh environments. The photodiode operates between -40°C to 100°C temperature range.
Typical rise and fall times are 12 nanoseconds, enabling fast switching performance. The package supports through-hole mounting and includes two pins for connection. The device has a short circuit current of 10μA and a dark current of 2nA, ensuring low noise operation.
Breakdown voltage is rated at 16V with an open circuit voltage of 330mV. The compact dimensions are approximately 5.6mm width, 5.5mm height, and 4.8mm diameter. It is RoHS compliant and manufactured in China. Explore more ams OSRAM Photodiode products and related electronic components at EnvMart for all your industrial and technical requirements.
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