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STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 4 A 600 V TO-220 STP4NK60ZFP

Category MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 9.3mm
Length 10.4mm
Model STP4NK60ZFP
Width 4.6mm
Mount Type Through Hole
Series MDmesh, SuperMESH
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 4A
Maximum Drain Source Voltage Vds 600V
Maximum Drain Source Resistance Rds 2Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 25W
Typical Gate Charge Qg @ Vgs 18.8nC
Maximum Gate Source Voltage Vgs -30, +30V
Forward Voltage Vf 1.6V

Key Features

  • High-performance MDmesh SuperMESH N-Channel MOSFET.
  • Maximum continuous drain current of 4 A.
  • Drain-source voltage rated at 600 V.
  • Through-hole TO-220 package type with 3 pins.
  • Low drain-source resistance of 2 Ω.
  • Enhancement mode channel operation.
  • Maximum gate-source voltage of ±30 V.
  • Typical gate charge of 18.8 nC.

Product Description

STMicroelectronics STP4NK60ZFP is a high-quality MDmesh SuperMESH N-Channel MOSFET designed for efficient power control in electrical and electronic equipment. This device supports a continuous drain current of 4 A and a maximum drain-source voltage of 600 V, making it ideal for high-voltage switching and amplification tasks. Packaged in a durable TO-220 housing, this MOSFET facilitates through-hole mounting for stable assembly in circuit boards.

Featuring an enhancement mode channel operation and a low resistance of 2 Ω between the drain and source, the STP4NK60ZFP ensures low conduction losses and higher efficiency. Its gate-to-source voltage limits of ±30 V provide flexible gate drive voltage design while maintaining safety margins.

The device offers a gate charge of 18.8 nC which contributes to fast switching performance. The power dissipation rating of 25 W supports moderate-power industrial, laboratory, and consumer electronics applications. The STP4NK60ZFP operates reliably across a temperature range from -55°C to 150°C, suitable for demanding environments.

Its compact form factor with dimensions 10.4 mm in length, 4.6 mm in width, and 9.3 mm height ensures suitability for space-constrained designs. The package contains 3 pins arranged for stable mechanical and electrical connections. This MOSFET is compliant with general industry standards and does not have automotive-specific certifications.

High-performance MDmesh SuperMESH N-Channel MOSFET. Maximum continuous drain current of 4 A. Drain-source voltage rated at 600 V. Through-hole TO-220 package type with 3 pins. Low drain-source resistance of 2 Ω. Enhancement mode channel operation.

Maximum gate-source voltage of ±30 V. Typical gate charge of 18.8 nC. Maximum power dissipation of 25 W. Wide operating temperature range from -55°C to 150°C. Compact dimensions: 10.4×4.6×9.3 mm.

This MOSFET is suited for industrial, power management, and electronic circuit design in electronics manufacturing, automation, and related sectors. Explore more high-quality semiconductor devices in the Discrete Semiconductors category at EnvMart.

STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 4 A 600 V TO-220 STP4NK60ZFP
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Frequently Asked Questions

The maximum continuous drain current for this model is 4 A.

The maximum drain-source voltage rating is 600 V.

It comes in a TO-220 package type with 3 pins.

The drain-source resistance is rated at 2 Ω.

The typical gate charge is 18.8 nC.

It operates reliably across a temperature range from -55°C to 150°C.

The maximum power dissipation rating is 25 W.

The maximum gate-source voltage is ±30 V.

This model features an enhancement mode N-channel.

The dimensions are 10.4 mm in length, 4.6 mm in width, and 9.3 mm in height.

It is suitable for industrial, power management, and electronic circuit design applications.

The country of origin for this model is India.

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