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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.3mm |
| Length | 10.4mm |
| Model | STP4NK60ZFP |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh, SuperMESH |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 4A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 2Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 25W |
| Typical Gate Charge Qg @ Vgs | 18.8nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.6V |
STMicroelectronics STP4NK60ZFP is a high-quality MDmesh SuperMESH N-Channel MOSFET designed for efficient power control in electrical and electronic equipment. This device supports a continuous drain current of 4 A and a maximum drain-source voltage of 600 V, making it ideal for high-voltage switching and amplification tasks. Packaged in a durable TO-220 housing, this MOSFET facilitates through-hole mounting for stable assembly in circuit boards.
Featuring an enhancement mode channel operation and a low resistance of 2 Ω between the drain and source, the STP4NK60ZFP ensures low conduction losses and higher efficiency. Its gate-to-source voltage limits of ±30 V provide flexible gate drive voltage design while maintaining safety margins.
The device offers a gate charge of 18.8 nC which contributes to fast switching performance. The power dissipation rating of 25 W supports moderate-power industrial, laboratory, and consumer electronics applications. The STP4NK60ZFP operates reliably across a temperature range from -55°C to 150°C, suitable for demanding environments.
Its compact form factor with dimensions 10.4 mm in length, 4.6 mm in width, and 9.3 mm height ensures suitability for space-constrained designs. The package contains 3 pins arranged for stable mechanical and electrical connections. This MOSFET is compliant with general industry standards and does not have automotive-specific certifications.
High-performance MDmesh SuperMESH N-Channel MOSFET. Maximum continuous drain current of 4 A. Drain-source voltage rated at 600 V. Through-hole TO-220 package type with 3 pins. Low drain-source resistance of 2 Ω. Enhancement mode channel operation.
Maximum gate-source voltage of ±30 V. Typical gate charge of 18.8 nC. Maximum power dissipation of 25 W. Wide operating temperature range from -55°C to 150°C. Compact dimensions: 10.4×4.6×9.3 mm.
This MOSFET is suited for industrial, power management, and electronic circuit design in electronics manufacturing, automation, and related sectors. Explore more high-quality semiconductor devices in the Discrete Semiconductors category at EnvMart.
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