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STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 3 A, 800 V Enhancement, 3-Pin TO-220 STP4NK80Z

Category MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 9.15mm
Length 10.4mm
Model STP4NK80Z
Width 4.6mm
Mount Type Through Hole
Series MDmesh, SuperMESH
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 3A
Maximum Drain Source Voltage Vds 800V
Maximum Drain Source Resistance Rds 3.5Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 80W
Typical Gate Charge Qg @ Vgs 22.5nC
Maximum Gate Source Voltage Vgs -30, +30V
Forward Voltage Vf 1.6V

Key Features

  • This MOSFET features a maximum power dissipation of 80 W for effective thermal management.
  • It operates over a wide temperature range from -55°C to 150°C, ensuring reliable performance in harsh environments.
  • The device exhibits a maximum drain-source resistance of 3.5 Ω, facilitating efficient current conduction.
  • Typical gate charge is 22.5 nC at the gate-source voltage, allowing fast switching.
  • It supports a maximum gate-source voltage range of -30 V to +30 V for safe gate operation.
  • The compact TO-220 package measures 10.4 mm length, 4.6 mm width, and 9.15 mm height for through-hole mounting.
  • Designed for industrial, power management, and electronic component applications.

Product Description

STMicroelectronics STP4NK80Z is a high-quality MDmesh, SuperMESH N-Channel MOSFET providing 3 A continuous drain current and an 800 V maximum drain-source voltage. It operates in enhancement mode and comes in a 3-pin TO-220 package suitable for through-hole mounting.

This MOSFET is engineered to handle up to 80 W power dissipation, making it ideal for power switching, regulation, and amplification tasks in industrial and commercial electronic equipment. Its operating temperature range of -55°C to 150°C ensures dependable performance in varied ambient conditions.

The device characteristics include a low maximum drain-source resistance of 3.5 Ω, contributing to reduced power loss and improved efficiency. It features a typical gate charge of 22.5 nC at the gate voltage, supporting rapid switching applications, and has a robust gate-source voltage tolerance between -30 V and +30 V to protect against voltage surges.

The compact TO-220 package benefits ease of installation and thermal management, with physical dimensions of 10.4 mm length, 4.6 mm width, and 9.15 mm height. This MOSFET is widely used in electronic circuits such as power supplies, motor drivers, lighting controls, and other discrete semiconductor applications.

This MOSFET features a maximum power dissipation of 80 W for effective thermal management. It operates over a wide temperature range from -55°C to 150°C, ensuring reliable performance in harsh environments. The device exhibits a maximum drain-source resistance of 3.5 Ω, facilitating efficient current conduction.

Typical gate charge is 22.5 nC at the gate-source voltage, allowing fast switching. It supports a maximum gate-source voltage range of -30 V to +30 V for safe gate operation. The compact TO-220 package measures 10.4 mm length, 4.6 mm width, and 9.15 mm height for through-hole mounting.

Designed for industrial, power management, and electronic component applications. Explore the STMicroelectronics range of MOSFETs and other discrete semiconductors on EnvMart for reliable industrial, laboratory, and commercial electronics solutions.

STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 3 A, 800 V Enhancement, 3-Pin TO-220 STP4NK80Z
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Frequently Asked Questions

The maximum continuous drain current for this model is 3 A.

This MOSFET has a maximum drain-source voltage rating of 800 V.

It can handle a maximum power dissipation of 80 W.

The operating temperature range is from -55°C to 150°C.

The maximum drain-source resistance is 3.5 Ω.

The typical gate charge is 22.5 nC at the gate-source voltage.

It supports a maximum gate-source voltage range of -30 V to +30 V.

The TO-220 package measures 10.4 mm in length, 4.6 mm in width, and 9.15 mm in height.

This model uses through-hole mounting.

It is designed for industrial, power management, and electronic component applications.

The channel type is N-channel, operating in enhancement mode.

The forward voltage is 1.6 V.

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