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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.15mm |
| Length | 10.4mm |
| Model | STP4NK80Z |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh, SuperMESH |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 3A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 3.5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 80W |
| Typical Gate Charge Qg @ Vgs | 22.5nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.6V |
STMicroelectronics STP4NK80Z is a high-quality MDmesh, SuperMESH N-Channel MOSFET providing 3 A continuous drain current and an 800 V maximum drain-source voltage. It operates in enhancement mode and comes in a 3-pin TO-220 package suitable for through-hole mounting.
This MOSFET is engineered to handle up to 80 W power dissipation, making it ideal for power switching, regulation, and amplification tasks in industrial and commercial electronic equipment. Its operating temperature range of -55°C to 150°C ensures dependable performance in varied ambient conditions.
The device characteristics include a low maximum drain-source resistance of 3.5 Ω, contributing to reduced power loss and improved efficiency. It features a typical gate charge of 22.5 nC at the gate voltage, supporting rapid switching applications, and has a robust gate-source voltage tolerance between -30 V and +30 V to protect against voltage surges.
The compact TO-220 package benefits ease of installation and thermal management, with physical dimensions of 10.4 mm length, 4.6 mm width, and 9.15 mm height. This MOSFET is widely used in electronic circuits such as power supplies, motor drivers, lighting controls, and other discrete semiconductor applications.
This MOSFET features a maximum power dissipation of 80 W for effective thermal management. It operates over a wide temperature range from -55°C to 150°C, ensuring reliable performance in harsh environments. The device exhibits a maximum drain-source resistance of 3.5 Ω, facilitating efficient current conduction.
Typical gate charge is 22.5 nC at the gate-source voltage, allowing fast switching. It supports a maximum gate-source voltage range of -30 V to +30 V for safe gate operation. The compact TO-220 package measures 10.4 mm length, 4.6 mm width, and 9.15 mm height for through-hole mounting.
Designed for industrial, power management, and electronic component applications. Explore the STMicroelectronics range of MOSFETs and other discrete semiconductors on EnvMart for reliable industrial, laboratory, and commercial electronics solutions.
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