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Infineon SIPMOS Type P-Channel MOSFET, 60 V, 8.8 A, 42 W Power Dissipation, 3-Pin TO-252 SPD08P06PGBTMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.3mm |
| Length | 6.5mm |
| Model | SPD08P06PGBTMA1 |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | SIPMOS |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 8.8A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 300mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 42W |
| Typical Gate Charge Qg @ Vgs | 10nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.55V |
Key Features
- Features enhanced mode operation for efficient switching performance.
- Has a low maximum drain-source resistance of 300 milliohms, minimizing conduction losses.
- Supports a maximum power dissipation of 42 Watts to handle high-power applications.
- Operates over a wide temperature range from -55°C to +175°C, ensuring durability.
- Utilizes the DPAK (TO-252) package for effective surface mount integration.
- Complies with the AEC-Q101 automotive standard for high reliability in automotive applications.
- Typical gate charge is 10 nanocoulombs at Vgs, enabling fast switching.
- Maximum gate-source voltage ranges from -20 V to +20 V providing robust control margins.
Product Description
Infineon SPD08P06PGBTMA1 SIPMOS Type P-Channel MOSFET is a high-performance discrete semiconductor device designed for efficient switching and power control in electronic circuits. This MOSFET comes in a compact 3-pin TO-252 surface mount package and is rated for a maximum continuous drain current of 8.8 amperes with a drain-source voltage of 60 volts.
Robust operation is ensured over a wide temperature range from -55°C up to 175°C, enabling use in demanding industrial, automotive, and renewable energy systems. The low maximum drain-source resistance (Rds(on)) of 300 milliohms reduces power losses and improves overall system efficiency. A typical gate charge of 10 nanocoulombs allows fast switching response critical for power management applications.
The device is qualified under the AEC-Q101 standard, highlighting its suitability for automotive electronic control modules and safety-critical systems. Its enhanced mode channel operation ensures reliable high-side switching functionality, making it an excellent choice for integration in battery management systems for electric vehicles, inverters for renewable energy, and consumer electronic switching devices.
Enhanced mode operation ensures efficient switching performance. Low Rds(on) reduces conduction losses. 42 W maximum power dissipation supports demanding load conditions. Wide operating temperature from -55°C to 175°C for harsh environments.
DPAK (TO-252) packaging enables compact surface mounting. AEC-Q101 automotive compliance for reliability and safety. 10 nC typical gate charge promotes fast switching cycles. Gate-source voltage tolerance from -20 V to +20 V offers robust gate control.
Ideal for automotive controls, industrial power management, and renewable energy inverters. P-channel configuration ideal for high-side switching applications.
This MOSFET is essential for industrial, automotive, manufacturing, HVAC, and consumer electronics where efficient power switching and control are critical. It provides a reliable and high-performance solution for engineers designing modern electronics requiring stringent automotive qualifications and extended temperature tolerance.
Explore more high-quality Infineon semiconductor products and find the perfect MOSFET solutions for your industrial and commercial needs at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 8.8 amperes.
It has a maximum drain-source voltage rating of 60 volts.
This unit supports a maximum power dissipation of 42 watts.
The typical gate charge at Vgs is 10 nanocoulombs.
The maximum gate-source voltage ranges from -20 V to +20 V.
This MOSFET utilizes a DPAK (TO-252) package for surface mount integration.
The maximum operating temperature is 175°C.
It can operate at a minimum temperature of -55°C.
The maximum drain-source resistance (Rds(on)) is 300 milliohms.
It complies with the AEC-Q101 automotive standard, ensuring high reliability for automotive applications.
The dimensions are 6.5 mm in length, 6.22 mm in width, and 2.3 mm in height.
This model features a P-channel configuration, making it suitable for high-side switching applications.
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