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Infineon SIPMOS N-Channel MOSFET 660 mA 200 V Depletion Mode 4-Pin SOT-223 BSP149H6327XTSA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 1.6mm
Length 6.5mm
Model BSP149H6327XTSA1
Width 3.5mm
Mount Type Surface
Series SIPMOS
Maximum Operating Temperature 150°C
Package Type SOT-223
Minimum Operating Temperature -55°C
Pin Count 4
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 660mA
Maximum Drain Source Voltage Vds 200V
Maximum Drain Source Resistance Rds 1.8Ω
Channel Mode Depletion
Maximum Power Dissipation Pd 1.8W
Typical Gate Charge Qg @ Vgs 11nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.2V
N-channel MOSFET,BSP452 0.7A 34VBrand Infineon

Key Features

  • Depletion mode channel for efficient switching applications.
  • Maximum power dissipation of 1.8 W ensures reliable operation.
  • Wide operating temperature range from -55°C to 150°C for harsh environments.
  • Low maximum drain-source resistance of 1.8 Ω for improved efficiency.
  • Compliant with AEC-Q101 automotive standards for high reliability.
  • Surface mount package type SOT-223 supports automated assembly.
  • Typical gate charge of 11 nC provides fast switching response.
  • Gate voltage rating of -20 V to +20 V allows flexible gate drive.

Product Description

Infineon BSP149H6327XTSA1 is a SIPMOS series N-Channel MOSFET designed for efficient switching and control in electronic systems. It supports a maximum continuous drain current of 660 mA and a drain-source voltage of 200 V, packaged in a compact 4-pin SOT-223 surface mount format. This device excels in applications requiring reliable operation across wide temperature ranges from -55°C up to 150°C, making it suitable for automotive and industrial uses.

The MOSFET employs depletion mode technology, enhancing its switching performance especially at lower voltages. With a maximum power dissipation of 1.8 W and low drain-source resistance of 1.8 Ω, it ensures minimal power loss and thermal stress. Typical gate charge is 11 nC at Vgs, allowing fast switching cycles and efficient energy management. Its gate-source voltage limits range from -20 V to +20 V, providing design flexibility.

Infineon BSP149H6327XTSA1 complies with the AEC-Q101 automotive standard, certifying its suitability for high-reliability automotive electronics. The device’s forward voltage of 1.2 V supports diverse circuit requirements. Its compact dimensions of 6.5 mm length, 3.5 mm width, and 1.6 mm height facilitate dense PCB layouts and automated manufacturing processes.

Typical applications include drivers for automation systems, switching power supplies, and other electronic equipment requiring robust and precise MOSFET control. This component’s dv/dt rating enhances its resilience against voltage spikes, ensuring longevity and stable operation in demanding environments.

Depletion mode channel for efficient switching applications. Survives extreme temperatures between -55°C and 150°C. Automotive standard AEC-Q101 compliance ensures quality and reliability. Compact SOT-223 package optimized for surface mounting.

Optimized power dissipation and low resistance for efficiency. Broad gate voltage range allows versatile electronic design. High dv/dt rating ensures enhanced voltage spike resilience. Typical gate charge supports fast switching performance.

Suitable for automotive, industrial automation, and power supply circuits. Includes 4 electrical pins for straightforward PCB integration. Explore a wide range of semiconductor products and MOSFET components in our Electronics & Electricals section, designed for cutting-edge industrial and automotive applications.

Infineon SIPMOS N-Channel MOSFET 660 mA 200 V Depletion Mode 4-Pin SOT-223 BSP149H6327XTSA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 660 mA.

It has a maximum drain-source voltage of 200 V.

The operating temperature range is from -55°C to 150°C.

This device is packaged in a SOT-223 type with 4 electrical pins.

The maximum power dissipation is 1.8 W.

The typical gate charge is 11 nC at Vgs.

The maximum gate-source voltage is rated between -20 V and +20 V.

It complies with the AEC-Q101 automotive standard.

The maximum drain-source resistance is 1.8 Ω.

It is suitable for applications such as drivers for automation systems and switching power supplies.

The forward voltage is 1.2 V.

This model features a depletion mode N-channel.

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