Infineon N-Channel Power MOSFET 40 V 11 A Surface Mount PQFN 8-Pin IRL100HS121

Infineon IRL100HS121 is a high-performance N-Channel Power MOSFET specifically engineered to support applications requiring efficient power switching and compact design. Its 8-pin PQFN package optimizes space utilization and supports high-frequency switching for a wide range of electronic circuits.

With a maximum continuous drain current of 11 A and a drain-source voltage rating of 40 V, this MOSFET is suitable for wireless charging systems, telecom equipment, and power adapters. The device's low on-resistance of 0.7 milliohms contributes to reduced conduction losses, enhancing overall system efficiency.

The IRL100HS121 supports a maximum power dissipation of 81 W, allowing it to handle demanding operational loads without performance degradation. It operates reliably in harsh temperature environments ranging from -55°C up to 175°C, fulfilling requirements for both industrial and automotive applications.

Featuring logic level compatibility, this MOSFET is designed to be driven directly by microcontrollers with standard 5 V logic levels, which helps reduce component counts and system cost. The typical gate charge of 80 nC enables rapid switching capabilities, making it ideal for high-frequency power electronics applications.

Additional benefits include compliance with RoHS directives and conformance to the automotive AEC-Q101 standard, ensuring product reliability and environmental safety. The forward voltage drop of 1 V contributes to efficient current flow and power management.

Designed for high speed switching and compact form factor applications. Low on-resistance of 0.7 milliohms ensures efficient power handling. Supports maximum power dissipation of 81 W for robust performance. Operates within temperature range from -55°C to 175°C.

Logic level compatible for direct microcontroller drive with 5 V supply. Forward voltage is rated at 1 V under normal operating conditions. Complies with RoHS and automotive standard AEC-Q101 for reliability. Typical gate charge is 80 nC at Vgs, enabling fast switching.

This MOSFET is ideal for use in industrial, automotive, telecommunications, and power management applications requiring highly efficient and reliable switching. Explore our extensive selection of power semiconductor devices to find compatible components for diverse electronic design needs.