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Infineon BSZ N-Channel MOSFET, 212 A Continuous Drain Current, 40 V Drain Source Voltage, 0.7 mΩ Rds(on) BSZ024N04LS6ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | BSZ024N04LS6ATMA1 |
| Mount Type | Surface |
| Series | BSZ |
| Maximum Operating Temperature | 175°C |
| Package Type | PQFN |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 212A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.7mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- Provides 212 A maximum continuous drain current for demanding applications.
- Features a 40 V maximum drain-source voltage rating enabling low-voltage power stages.
- Low on-resistance of 0.7 milliohms reduces conduction losses.
- Capable of dissipating 81 W power to handle thermal stress effectively.
- Operates within a wide temperature range from -55°C to 175°C for robust performance.
- Typical gate charge of 80 nC balances switching speed and drive requirements.
- Maximum gate-source voltage limited to 20 V to protect the gate.
- Supplied in an 8-pin PQFN package optimized for surface mounting and heat transfer.
Product Description
Infineon BSZ024N04LS6ATMA1 is a silicon-based N-channel MOSFET engineered for high-current switching applications where efficiency and thermal management are crucial. The device operates with a maximum continuous drain current of 212 A and withstands drain-source voltages up to 40 V, making it highly suitable for low-voltage power stages in industrial and commercial electronic systems.
This MOSFET features an exceptionally low drain-source resistance of 0.7 milliohms, minimizing conduction losses during operation, and supports power dissipation up to 81 W to reliably manage thermal stresses encountered under heavy load conditions. Its wide operating temperature range from -55°C to 175°C ensures dependable performance in harsh environments and demanding applications.
The device is designed with a typical gate charge of 80 nC, providing a balanced trade-off between switching speed and gate drive energy consumption, protected by a gate-source voltage rating limited to 20 V for robust gate reliability. It comes in an 8-pin PQFN package optimized for efficient PCB layout, heat dissipation, and ease of surface mounting.
Compliant with RoHS directives, this MOSFET is particularly well-suited for use in motor driver stages requiring high continuous current, primary or synchronous stages in DC-DC converters, and power electronics in industrial drive systems. It also finds application in battery management and other high-current switching contexts where compact and efficient packaging is essential.
212 A continuous drain current delivers high load capacity. 40 V drain-source voltage rating enables low-voltage power design. 0.7 mΩ on-resistance reduces power loss. 81 W power dissipation rating supports thermal challenges.
Wide -55°C to 175°C operating temperature range. 80 nC typical gate charge for balanced switching performance. 20 V maximum gate-source voltage for gate protection. 8-pin PQFN package optimized for mounting and heat transfer.
RoHS compliant for environmental safety. Applications include motor drivers, DC-DC converters, and industrial controls. Explore our broad range of semiconductor products in the Electronics & Electricals section at EnvMart for advanced industrial and electronic component solutions.
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Frequently Asked Questions
The maximum continuous drain current of this model is 212 A, making it suitable for high-current applications.
This MOSFET has a maximum drain-source voltage rating of 40 V, allowing for low-voltage power stages.
The on-resistance is 0.7 milliohms, which helps in reducing conduction losses during operation.
It can dissipate up to 81 W, which is effective for managing thermal stress under heavy load conditions.
The operating temperature range is from -55°C to 175°C, ensuring reliable performance in various environments.
The typical gate charge is 80 nC, providing a balance between switching speed and gate drive energy consumption.
The maximum gate-source voltage is limited to 20 V, which protects the gate from overvoltage conditions.
It is supplied in an 8-pin PQFN package, optimized for surface mounting and heat transfer.
Yes, this model is compliant with RoHS directives, ensuring environmental safety.
It is suitable for applications such as motor drivers, DC-DC converters, and industrial controls.
This MOSFET has a pin count of 8, which is typical for its package type.
This model features an N-channel configuration, which is commonly used in high-current switching applications.
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