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Infineon IPL N-Channel MOSFET 21 A 650 V Enhancement Mode 5-Pin ThinPAK 8x8 IPL65R130CFD7AUMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Length | 8.1mm |
| Model | IPL65R130CFD7AUMA1 |
| Mount Type | Surface |
| Series | IPL |
| Maximum Operating Temperature | 150°C |
| Package Type | ThinPAK 8x8 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | RoHS |
| Pin Count | 5 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 21A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 95mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 171W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1V |
Key Features
- The device features an enhancement mode channel for efficient switching performance.
- Its maximum drain-source resistance is rated at 95 mΩ, ensuring low conduction losses.
- Designed for surface mounting, it operates reliably from -40°C up to 150°C.
- Typical gate charge is 80 nC at Vgs, enabling low switching losses.
- Maximum power dissipation is 171 W, suited for high power density applications.
- The MOSFET supports a maximum gate-source voltage of 30 V with a forward voltage drop of approximately 1 V.
- The package dimensions include a length of 8.1 mm within a ThinPAK 8x8 form factor.
- It complies with RoHS and meets AEC-Q101 automotive standard for quality and reliability.
Product Description
Infineon IPL65R130CFD7AUMA1 is an N-Channel Enhancement mode MOSFET designed for industrial power applications requiring high efficiency and reliability. This device supports a maximum continuous drain current of 21 A and a drain-source voltage rating of 650 V, making it ideal for high voltage switching environments.
Packaged in a 5-Pin ThinPAK 8x8 configuration, the MOSFET provides excellent thermal performance and power density suitable for resonant topologies in servers, telecom equipment, solar inverters, and electric vehicle charging stations. The reduced gate charge of 80 nC and low drain-source resistance minimizes switching and conduction losses, promoting improved efficiency.
Operation is supported across a temperature range from -40°C to 150°C, allowing for robust use in demanding industrial and automotive environments. The device's quality is certified with RoHS compliance and the AEC-Q101 automotive standard, ensuring durability under harsh conditions.
Key technical features include a maximum power dissipation of 171 W, a maximum gate-source voltage of 30 V, and forward voltage around 1 V, enabling its integration into high power density circuits. Its surface mount assembly enables flexible PCB layouts and compact designs.
The device offers significantly reduced switching losses compared to competing MOSFETs. Extra safety margin with enhanced voltage breakdown rating for complex bus voltage designs. Improved full-load efficiency in industrial switched-mode power supply (SMPS) applications.
High power density package supports advanced industrial and automotive power management systems. Appropriate for use in server, telecom, solar power, and EV charging station applications. Choose Infineon IPL65R130CFD7AUMA1 for a reliable, high-performance MOSFET that meets industrial demands for efficiency, power density, and automotive standards.
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Frequently Asked Questions
The maximum continuous drain current for the Infineon IPL65R130CFD7AUMA1 is 21 A.
This model has a maximum drain-source voltage rating of 650 V.
The package dimensions for this MOSFET are 8.1 mm in length, and it is designed in a ThinPAK 8x8 form factor.
The maximum power dissipation for the IPL65R130CFD7AUMA1 is rated at 171 W.
It operates reliably within a temperature range of -40°C to 150°C.
The typical gate charge for this model at Vgs is 80 nC.
The maximum gate-source voltage supported by this device is 30 V.
The forward voltage drop for the IPL65R130CFD7AUMA1 is approximately 1 V.
This MOSFET is designed for surface mounting.
It complies with the AEC-Q101 automotive standard, ensuring quality and reliability.
The maximum drain-source resistance for this model is rated at 95 mΩ, ensuring low conduction losses.
The country of origin for the Infineon IPL65R130CFD7AUMA1 is India.
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