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Infineon OptiMOS™ 8-Pin TDSON N-Channel MOSFET 479 A Continuous Drain Current 25 V BSC004NE2LS5ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 5.49mm |
| Model | BSC004NE2LS5ATMA1 |
| Width | 6.35mm |
| Mount Type | Surface |
| Series | OptiMOS™ |
| Maximum Operating Temperature | 175°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 479A |
| Maximum Drain Source Voltage Vds | 25V |
| Maximum Drain Source Resistance Rds | 0.45mΩ |
| Maximum Power Dissipation Pd | 188W |
| Typical Gate Charge Qg @ Vgs | 135nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- Designed for high-current surface-mount power switching applications.
- Features OptiMOS™ series technology for efficient conduction.
- Maximum drain-source resistance of 0.45 milliohms reduces energy loss.
- Supports up to 188 watts power dissipation in demanding thermal environments.
- Designed to operate from -55°C to 175°C for extended temperature ranges.
- Typical gate charge of 135 nanocoulombs allowing controlled switching performance.
- Robust 20 V maximum gate-source voltage for secure gate driving.
- Compact 8-pin TDSON package supports optimized PCB layout.
Product Description
Infineon BSC004NE2LS5ATMA1 is a high-current OptiMOS™ N-Channel MOSFET designed for demanding surface-mount power switching applications requiring substantial continuous drain current with low conduction losses. It operates at a maximum drain-source voltage of 25 V and supports a continuous drain current of up to 479 A, making it suitable for high-performance power electronics.
This MOSFET is enclosed in a compact 8-pin TDSON package optimized for surface mounting, ensuring effective thermal management for power dissipation up to 188 W. The device is engineered to withstand a wide operating temperature range from -55°C to 175°C, which supports reliability in harsh industrial, automotive, and telecommunications environments.
Its 0.45 milliohm maximum drain-source resistance (Rds(on)) minimizes on-state power losses, improving efficiency. The typical gate charge of 135 nanocoulombs at Vgs enables precise switching control, essential for gate-drive design. With a maximum gate-source voltage rating of 20 V, the device allows robust gate-drive margins to secure operation.
Applications include high-current DC power distribution modules, synchronous rectification in low-voltage converters, motor inverter stages requiring high peak currents, battery management systems, and power stages in telecommunications rectifiers. Its N-channel topology suits low-side switching and synchronous rectifier use cases.
This MOSFET offers a reliable solution for industrial, automotive, laboratory, telecommunications, and power management applications that demand high power efficiency and thermal resilience.
Designed for high-current surface-mount power switching applications. OptiMOS™ series technology for low conduction losses. Maximum drain-source resistance of 0.45 mΩ minimizes power dissipation. Supports power dissipation up to 188 W.
Operates across a wide temperature range from -55°C to 175°C. Typical gate charge of 135 nC allows controlled gate switching. Robust 20 V maximum gate-source voltage rating. Compact 8-pin TDSON surface-mount package. Explore more industrial electronics and semiconductor products at EnvMart for optimized power management design solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 479 A.
This MOSFET has a maximum drain-source voltage rating of 25 V.
It supports a maximum power dissipation of 188 W.
The operating temperature range for this MOSFET is from -55°C to 175°C.
The maximum drain-source resistance (Rds(on)) for this unit is 0.45 milliohms.
The typical gate charge is 135 nanocoulombs at Vgs.
It comes in a compact 8-pin TDSON package optimized for surface mounting.
The maximum gate-source voltage rating is 20 V.
The dimensions are 5.49 mm in length, 6.35 mm in width, and 1.1 mm in height.
This MOSFET features an N-channel topology.
The country of origin for this MOSFET is India.
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