Infineon N-Channel MOSFET 230 mA 60 V Depletion Mode Surface Mount 3-Pin SOT-23 BSS138IXTSA1

Infineon BSS138IXTSA1 is a precision N-Channel MOSFET transistor manufactured for use in discrete semiconductor applications where reliable switching and low power loss are critical. It uses depletion mode technology and is optimized for low current and low voltage circuit requirements, ideal for signal switching, amplification, and digital logic circuits.

This MOSFET supports a continuous drain current of 230 mA and withstands maximum drain-source voltages up to 60 V. Its robust package SOT-23 with 3 pins makes it suitable for surface mounting on compact printed circuit boards, offering space efficiency and mechanical stability.

Key electrical features include a maximum drain-source resistance of 6 ohms which helps to minimize conduction losses, a maximum gate-source voltage of 20 V providing a wide control voltage range, and a typical gate charge of 1 nC enabling fast switching with minimal delay. The device can safely dissipate up to 0.36 W of power and function over a wide operating temperature range from -55°C to 150°C, ensuring suitability for many industrial and commercial electronic systems.

The physical dimensions of length 3.04 mm, width 1.4 mm, and height 1.12 mm underline its compactness and appropriateness for densely packed electronic designs.

Applications of this MOSFET span industrial electronics, consumer devices, power management circuits, switching regulators, and signal processing modules where high efficiency, reliability, and small form factor are required.

Infineon maintains consistent manufacturing standards ensuring quality and performance in electronic component supply chains. This model BSS138IXTSA1 is a verified semiconductor product designed for new installations and is suited for a variety of engineering projects and designs.

Set your product development on a foundation of quality with this Infineon BSS138IXTSA1 MOSFET, available with full technical support and documentation. The MOSFET is packaged in a compact 3-Pin SOT-23 surface mount package.

Offers low drain-source resistance of 6 ohms reducing power losses. Supports continuous drain current of 230 mA with maximum voltage of 60 V. Operates reliably from -55°C to 150°C for industrial use. Maximum gate-source voltage rating of 20 V ensures robust control.

Maximum power dissipation is 0.36 W for low power applications. Typical gate charge of 1 nC enables fast switching performance. Compact physical dimensions measure 3.04 mm length, 1.4 mm width, and 1.12 mm height. Browse the Electronics & Electricals category at EnvMart for more semiconductor components and MOSFET options to suit your applications.