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Infineon CoolMOS N-Channel MOSFET 12 A 650 V Enhancement Type 3-Pin TO-252 IPD60R280P7ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.41mm |
| Length | 6.73mm |
| Model | IPD60R280P7ATMA1 |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | CoolMOS |
| Package Type | TO-252 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 12A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 280mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 53W |
| Typical Gate Charge Qg @ Vgs | 18nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 900mV |
Key Features
- This enhancement mode MOSFET features a low maximum drain-source resistance of 280 mΩ.
- It has a maximum power dissipation rating of 53 W suitable for power applications.
- The typical gate charge is 18 nC at the gate-source voltage, optimizing switching performance.
- Designed for surface mount applications with a compact package size of 6.73 mm length and 6.22 mm width.
- Offers reliable operation up to a maximum gate-source voltage of ±20 V.
- This device has a forward voltage of 900 mV and is RoHS compliant.
- Engineered with Infineon's CoolMOS technology to improve efficiency and thermal performance.
- Automotive standard compliance is not certified for this model.
Product Description
Infineon IPD60R280P7ATMA1 CoolMOS N-Channel MOSFET is a power semiconductor device designed for switching and amplification applications within electronic circuits. Featuring a maximum continuous drain current of 12 A and a drain-source voltage rating of 650 V, this enhancement mode transistor offers high efficiency and reliability in a 3-pin TO-252 surface mount package.
The transistor's low on-resistance of 280 mΩ reduces conduction losses, contributing to improved thermal performance during operation. Its typical gate charge of 18 nC ensures efficient gate drive requirements, optimizing switching speed and power consumption.
With a maximum power dissipation rating of 53 W, this device is suitable for various industrial, automotive (non-certified), and power management applications requiring robust switching characteristics and thermal stability.
The compact surface mount design with dimensions 6.73 mm length, 6.22 mm width, and 2.41 mm height facilitates PCB space saving, while the device operates safely with a maximum gate-source voltage of ±20 V. The forward voltage of 900 mV further supports efficient conduction.
Manufactured using Infineon's advanced CoolMOS technology, this MOSFET delivers enhanced switching performance suitable for power supplies, motor drives, and other electronic systems requiring efficient power conversion.
This enhancement mode MOSFET features a low maximum drain-source resistance of 280 mΩ. Maximum continuous drain current of 12 A ensures high current capability. Drain-source voltage rating of 650 V supports medium voltage applications.
Compact TO-252 surface mount package for effective PCB integration. Typical gate charge of 18 nC for optimized switching performance. Maximum power dissipation rating of 53 W for thermal reliability. Forward voltage of 900 mV supports efficient conduction.
RoHS compliant and Green Product (lead-free).
This Infineon MOSFET is ideal for industrial electronics, power management circuits, automotive electronics (where qualification is not required), and other electronic devices requiring reliable, efficient transistor switching.
Explore additional Infineon semiconductor components and power MOSFETs in the EnvMart catalog for comprehensive electronic applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 12 A.
This MOSFET has a drain-source voltage rating of 650 V.
The maximum power dissipation rating is 53 W, making it suitable for various power applications.
The typical gate charge is 18 nC at the gate-source voltage, optimizing switching performance.
The dimensions of the TO-252 package are 6.73 mm in length, 6.22 mm in width, and 2.41 mm in height.
The maximum gate-source voltage for this model is ±20 V.
The forward voltage is 900 mV, which supports efficient conduction.
This model supports surface mount installation, suitable for compact PCB designs.
The maximum drain-source resistance is 280 mΩ, which helps reduce conduction losses.
Yes, this device is RoHS compliant and is a Green Product (lead-free).
This model is suitable for industrial electronics, power management circuits, and automotive electronics where qualification is not required.
This MOSFET is engineered with Infineon's CoolMOS technology, enhancing efficiency and thermal performance.
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