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Infineon OptiMOS 5 N-Channel MOSFET & Diode 90 A 40 V Enhancement 8-Pin TDSON IPC90N04S53R6ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 5.25mm |
| Model | IPC90N04S53R6ATMA1 |
| Width | 5.58mm |
| Mount Type | Surface |
| Series | OptiMOS 5 |
| Maximum Operating Temperature | 175°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 90A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 3.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 63W |
| Typical Gate Charge Qg @ Vgs | 24.5nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- Features OptiMOS 5 technology for low conduction and switching losses.
- Enhancement mode N-channel for robust performance.
- Maximum power dissipation of 63 watts ensures reliable heat management.
- Automotive standard AEC-Q101 qualified for durability and safety.
- Operates within a temperature range from -55°C to 175°C for extended applications.
- Low typical gate charge of 24.5 nC enables efficient switching.
- Compact dimensions of 5.25mm length and 5.58mm width suit space-constrained designs.
- Forward voltage drop of 1.1 V facilitates efficient diode operation.
Product Description
Infineon IPC90N04S53R6ATMA1 is an advanced OptiMOS 5 N-Channel MOSFET combined with a diode, designed for automotive and industrial electronic applications requiring efficient power switching.
This component supports a continuous drain current of 90 A at a maximum drain-source voltage of 40 V. Its 8-pin TDSON surface-mount package provides a compact footprint with a height of 1.1 mm, length of 5.25 mm, and width of 5.58 mm, making it suitable for dense PCB designs.
With enhancement mode channel operation, it offers enhanced switching behavior and low conduction losses thanks to its 3.5 mΩ maximum drain-source resistance. The maximum power dissipation of 63 W and operation temperature range from -55°C to 175°C ensure robustness in demanding environments.
The device boasts a typical gate charge of 24.5 nC at Vgs and a maximum gate-source voltage rating of 20 V to support high-frequency switching efficiently. Its forward voltage of 1.1 V optimizes diode conduction performance.
Qualifying to the automotive standard AEC-Q101, this MOSFET is reliable for automotive electronics, motor drives, and other power management systems. It combines efficient power management with durability, making it an ideal choice for automotive and industrial designs.
Features OptiMOS 5 technology for low conduction and switching losses. Enhancement mode N-channel for robust performance. Maximum power dissipation of 63 watts ensures reliable heat management. Automotive standard AEC-Q101 qualified for durability and safety.
Operates within a temperature range from -55°C to 175°C for extended applications. Low typical gate charge of 24.5 nC enables efficient switching. Compact dimensions of 5.25mm length and 5.58mm width suit space-constrained designs.
Forward voltage drop of 1.1 V facilitates efficient diode operation. Maximum drain-source resistance of 3.5 milliohms reduces conduction losses.
This Infineon MOSFET & diode component is well suited for use in automotive electronics, industrial power supplies, motor control, and advanced power management circuits. Its high current handling with low losses provides efficient and reliable performance in demanding applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 90 A.
It has a maximum drain-source voltage rating of 40 V.
The maximum power dissipation is 63 W.
It operates within a temperature range from -55°C to 175°C.
The dimensions are 5.25 mm in length, 5.58 mm in width, and 1.1 mm in height.
The typical gate charge is 24.5 nC at Vgs.
The forward voltage drop is 1.1 V.
The maximum drain-source resistance is 3.5 mΩ.
It complies with the automotive standard AEC-Q101.
This model uses an enhancement mode N-channel.
It comes in an 8-pin TDSON surface-mount package.
This MOSFET is suitable for automotive electronics, industrial power supplies, and motor control applications.
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