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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 8.1mm |
| Model | IPL65R070C7AUMA1 |
| Width | 8.1mm |
| Mount Type | Surface |
| Series | IPL60R |
| Maximum Operating Temperature | 150°C |
| Package Type | ThinPAK |
| Minimum Operating Temperature | -40°C |
| Pin Count | 5 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 28A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 70mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 169W |
| Typical Gate Charge Qg @ Vgs | 64nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 800mV |
Infineon IPL65R070C7AUMA1 is a high-performance N-Channel MOSFET designed for power electronic applications. It supports a continuous drain current of 28A and withstands drain-source voltages up to 650V, making it suitable for high-voltage and high-current scenarios.
Operated in enhancement mode, this MOSFET utilizes advanced CoolMOS™ C7 superjunction technology that offers one of the best-in-class RDS(on)/package ratios, reducing conduction losses and enhancing overall efficiency. The low energy stored in output capacitance and lower gate charge contribute to reduced switching losses across full load conditions.
The device is supplied in a compact 5-pin ThinPAK surface mount package measuring 8.1 mm by 8.1 mm in area with a height of 1.1 mm, enabling efficient PCB layout and thermal dissipation.
Its operational temperature range from −40°C to 150°C ensures reliability in industrial, automotive, and high-power applications. It supports a maximum power dissipation of 169W, allowing for effective thermal handling under load.
This component is ideal for use in power management, motor drives, industrial inverters, and automotive electronics where high voltage, current handling, and efficiency are critical.
Low RDS(on) of 70mΩ enables reduced conduction losses. Enhancement mode channel provides stable on/off control. High maximum drain current of 28A supports demanding load conditions. Broad temperature operation maintains performance in harsh environments.
Compact 5-pin ThinPAK package facilitates compact system design. Robust gate voltage rating of ±20V enhances device longevity. Typical gate charge of 64nC enables fast switching speeds. Maximum power dissipation of 169W allows for high performance under power stress.
This Infineon N-Channel MOSFET is widely used across power electronics, industrial automation, and automotive sectors. Engineers select this component for its reliable operation and efficiency benefits in switching applications.
Explore more MOSFETs and related semiconductor components on EnvMart for your electronic design needs.
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