Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
24/7 Customer Support

Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries

24/7 Customer Support
Save up to 28% with GST Input

Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries

Lowest Price Challenge
# Lowest Price Challenge

If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon

Lowest Price Challenge
100% Original Products

Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase

Infineon IPL60R N-Channel MOSFET 28A 650V Enhancement Mode 5-Pin ThinPAK IPL65R070C7AUMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 1.1mm
Length 8.1mm
Model IPL65R070C7AUMA1
Width 8.1mm
Mount Type Surface
Series IPL60R
Maximum Operating Temperature 150°C
Package Type ThinPAK
Minimum Operating Temperature -40°C
Pin Count 5
Channel Type N
Maximum Continuous Drain Current Id 28A
Maximum Drain Source Voltage Vds 650V
Maximum Drain Source Resistance Rds 70mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 169W
Typical Gate Charge Qg @ Vgs 64nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 800mV

Key Features

  • Offers low RDS(on) with 70mΩ maximum drain-source resistance.
  • Operates with an enhancement mode channel type for efficient switching.
  • High maximum power dissipation of 169W supports demanding applications.
  • Wide temperature range from -40°C to 150°C for robust performance.
  • Typical gate charge of 64nC enables fast switching and improved energy efficiency.
  • Supports a maximum gate-source voltage of ±20V for durable gate control.
  • Compact dimensions of 8.1 mm x 8.1 mm x 1.1 mm facilitate space-saving designs.
  • Surface mount ThinPAK package optimizes board space and thermal management.

Product Description

Infineon IPL65R070C7AUMA1 is a high-performance N-Channel MOSFET designed for power electronic applications. It supports a continuous drain current of 28A and withstands drain-source voltages up to 650V, making it suitable for high-voltage and high-current scenarios.

Operated in enhancement mode, this MOSFET utilizes advanced CoolMOS™ C7 superjunction technology that offers one of the best-in-class RDS(on)/package ratios, reducing conduction losses and enhancing overall efficiency. The low energy stored in output capacitance and lower gate charge contribute to reduced switching losses across full load conditions.

The device is supplied in a compact 5-pin ThinPAK surface mount package measuring 8.1 mm by 8.1 mm in area with a height of 1.1 mm, enabling efficient PCB layout and thermal dissipation.

Its operational temperature range from −40°C to 150°C ensures reliability in industrial, automotive, and high-power applications. It supports a maximum power dissipation of 169W, allowing for effective thermal handling under load.

This component is ideal for use in power management, motor drives, industrial inverters, and automotive electronics where high voltage, current handling, and efficiency are critical.

Low RDS(on) of 70mΩ enables reduced conduction losses. Enhancement mode channel provides stable on/off control. High maximum drain current of 28A supports demanding load conditions. Broad temperature operation maintains performance in harsh environments.

Compact 5-pin ThinPAK package facilitates compact system design. Robust gate voltage rating of ±20V enhances device longevity. Typical gate charge of 64nC enables fast switching speeds. Maximum power dissipation of 169W allows for high performance under power stress.

This Infineon N-Channel MOSFET is widely used across power electronics, industrial automation, and automotive sectors. Engineers select this component for its reliable operation and efficiency benefits in switching applications.

Explore more MOSFETs and related semiconductor components on EnvMart for your electronic design needs.

Infineon IPL60R N-Channel MOSFET 28A 650V Enhancement Mode 5-Pin ThinPAK IPL65R070C7AUMA1
Looking to purchase in bulk?
  • Purchase item in bulk quantity
  • Get best price for your business

Comments (0)

No customer reviews for the moment.

Frequently Asked Questions

The maximum continuous drain current for the Infineon IPL65R070C7AUMA1 is 28A.

It can withstand a maximum drain-source voltage of 650V.

The maximum drain-source resistance (RDS(on)) is 70mΩ.

The dimensions of the ThinPAK package are 8.1 mm x 8.1 mm with a height of 1.1 mm.

The typical gate charge (Qg) at Vgs is 64nC.

The maximum power dissipation for this MOSFET is 169W.

It operates within a temperature range of -40°C to 150°C.

This model uses an enhancement mode N-channel type.

The maximum gate-source voltage (Vgs) is ±20V.

It is suitable for power management, motor drives, industrial inverters, and automotive electronics.

The ThinPAK package has 5 pins.

The Infineon IPL65R070C7AUMA1 is manufactured in India.

Related Products

Other Products from this brand

$6.90
$6.69 Save 3%
Tax included
Quantity
Delivery Time Delivered within 0-3 days
  • Global Payments 140+ CountriesGlobal Payments 140+ Countries
  • Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP WorldGlobal Shipping Fedex/UPS/DHL/Aramex/ BlueDart/Delhivery/DP World
  • 24/7 Customer Support Email/Chat/Telephonic Support24/7 Customer Support Email/Chat/Telephonic Support
$6.90
$6.69
Tax included