$0.50
$0.49
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Infineon N-Channel MOSFET, 8.5 A Continuous Drain Current, 700 V Drain Source Voltage, Enhancement Mode IPS70R600P7SAKMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 6.22mm |
| Length | 6.73mm |
| Model | IPS70R600P7SAKMA1 |
| Width | 2.4mm |
| Mount Type | Through Hole |
| Series | IPS70R |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-251 |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 8.5A |
| Maximum Drain Source Voltage Vds | 700V |
| Maximum Drain Source Resistance Rds | 600mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 43.1W |
| Typical Gate Charge Qg @ Vgs | 10.5nC |
| Maximum Gate Source Voltage Vgs | 16V |
| Forward Voltage Vf | 900mV |
Key Features
- Supports maximum continuous drain current of 8.5 A for reliable power handling.
- Maximum drain-source voltage rating of 700 V for high voltage applications.
- Enhancement mode channel operation ideal for switching and amplification.
- Compact 3-pin TO-251 through-hole package for easy PCB mounting.
- Maximum power dissipation up to 43.1 W to sustain thermal loads.
- Operates across a temperature range from -40°C to 150°C for versatile environments.
- Low on-resistance of 600 milliohms ensuring energy efficient switching.
- Typical gate charge of 10.5 nC at Vgs for fast switching performance.
Product Description
Infineon IPS70R600P7SAKMA1 is a high-performance N-Channel MOSFET designed for power switching in low power switched-mode power supplies and similar industrial, electronic, and HVAC applications. Featuring an 8.5 A continuous drain current rating and a robust 700 V drain-source voltage capability, this device fits demanding environments.
Utilizing enhancement mode operation, it offers high efficiency switching combined with low on-resistance of 600 mΩ to reduce conduction losses. Packaged in a compact TO-251 3-pin through-hole form factor, it is ideal for PCB mounting and prototyping.
This MOSFET supports a maximum power dissipation of 43.1 W and is rated for operation in large thermal ranges from -40°C to 150°C, making it suitable for automotive, industrial, and commercial electronics.
The device integrates an internal protection Zener diode to enhance reliability. Its typical gate charge of 10.5 nC at Vgs enables high speed switching performance, critical in modern flyback topologies, chargers, and adapters.
Maximum continuous drain current: 8.5 A. Maximum drain-source voltage: 700 V. Package type: TO-251, 3-pin. Maximum power dissipation: 43.1 W. Operating temperature: -40°C to 150°C. On-resistance Rds: 600 milliohms. Gate charge Qg: 10.5 nC (typical).
Gate-source voltage maximum: ±16 V. Forward voltage: 900 mV.
This device is part of the IPS70R series, tailored for low power switched-mode power supply applications such as mobile phone chargers and notebook adapters, delivering performance gains with superjunction technology.
Common industrial use cases include electronic circuit switching, power management in consumer electronics, laboratory power supplies, and HVAC control systems. Explore more Infineon semiconductor components in the MOSFET category on EnvMart.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 8.5 A.
It has a maximum drain-source voltage rating of 700 V, suitable for high voltage applications.
This device comes in a compact TO-251 3-pin through-hole package, ideal for PCB mounting.
The maximum power dissipation for this MOSFET is up to 43.1 W, allowing it to sustain thermal loads effectively.
It operates across a temperature range from -40°C to 150°C, making it versatile for various environments.
The on-resistance of this model is 600 milliohms, ensuring energy-efficient switching.
The typical gate charge at Vgs for this unit is 10.5 nC, enabling fast switching performance.
The maximum gate-source voltage for this MOSFET is ±16 V, providing flexibility in circuit design.
The dimensions of this model are 6.73 mm in length, 2.4 mm in width, and 6.22 mm in height.
This device is suitable for low power switched-mode power supplies, electronic circuit switching, and power management in consumer electronics.
This model features an N-channel type, which is ideal for enhancement mode operation.
The country of origin for this MOSFET is India.
Related Products
$23.16
$20.22
-12.7%
Other Products from this brand
$19.84
$19.24
-3%
New
Recently Viewed Products
$0.50
$0.49
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent