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Infineon IMW1 N-Channel MOSFET 36 A 1.2 kV Enhancement 3-Pin TO-247 IMW120R060M1HXKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IMW120R060M1HXKSA1 |
| Mount Type | Surface |
| Series | IMW1 |
| Package Type | TO-247 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 36A |
| Maximum Drain Source Voltage Vds | 1.2kV |
| Maximum Drain Source Resistance Rds | 60mΩ |
| Channel Mode | Enhancement |
Key Features
- This MOSFET features an enhancement-mode channel for efficient switching.
- It provides a low maximum drain-source resistance of 60 milliohms for low conduction losses.
- The device uses a robust surface mount type TO-247 package suitable for power handling.
- Its 3-pin configuration supports straightforward integration in power electronics.
- The IMW1 series technology ensures high performance and reliability in power applications.
- The wide gate-source voltage range and zero-volt turn-off gate voltage enable simple gate drive design.
- The body diode is robust with low loss and rated for hard commutation.
- Temperature-independent turn-off switching losses improve efficiency under varying thermal conditions.
Product Description
Infineon IMW120R060M1HXKSA1 N-Channel Enhancement-mode Power MOSFET is designed for high power applications requiring continuous current up to 36 A and blocking voltages of 1.2 kV. Packaged in a TO-247 3-pin surface mount device, it integrates advanced trench semiconductor technology optimized for combining excellent switching performance with high reliability.
This MOSFET offers significantly lower switching and conduction losses compared to conventional silicon devices, providing improved system efficiencies in industrial power conversion and motor control applications. Its benchmark high threshold voltage above 4 V and zero-volt turn-off gate voltage enable simplified gate drive circuits. The wide gate to source voltage range enhances design flexibility.
The MOSFET features a robust and low-loss body diode rated for hard commutation, enabling reliable operation in circuits with inductive loads or synchronous rectification. Additionally, its temperature-independent turn-off switching losses ensure consistent performance across varied operating conditions, making it suitable for demanding industrial, manufacturing, and power supply uses.
Applications include power inverters, motor drives, renewable energy systems, and other power electronics where efficient high-voltage switching is critical. This product belongs to the IMW1 series by Infineon, which represents high-quality SiC MOSFET technology.
The 3-pin TO-247 package is ideal for surface mounting on power modules and PCBs with heat sinking. Its enhancement-mode channel and 36 A continuous drain current rating support heavy-duty applications. Low drain-source resistance of 60 milliohms reduces power losses and heat generation.
Robust gate threshold and wide gate-source voltage range facilitate easy and reliable gate control setups. Reliable body diode performance supports hard commutation scenarios in power circuits. Designed and made to meet industrial standards, supporting long-term operational stability.
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Frequently Asked Questions
The maximum continuous drain current for this MOSFET is 36 A.
The maximum drain-source voltage rating is 1.2 kV.
It uses a TO-247 package type, which is suitable for surface mounting.
The maximum drain-source resistance is 60 milliohms.
This model features an N-channel enhancement mode.
It is suitable for applications such as power inverters, motor drives, and renewable energy systems.
The zero-volt turn-off gate voltage enables simplified gate drive circuit designs.
The body diode is robust and rated for hard commutation, allowing reliable operation in inductive load circuits.
This MOSFET has a pin count of 3.
The low maximum drain-source resistance of 60 milliohms reduces power losses and heat generation, improving system efficiency.
The country of origin for this product is India.
It belongs to the IMW1 series, which is known for high-quality SiC MOSFET technology.
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