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Infineon HEXFET N-Channel MOSFET, 16 A, 110 V, Enhancement Mode, 3-Pin TO-252 IRFR3910TRLPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 6.22mm |
| Length | 6.73mm |
| Model | IRFR3910TRLPBF |
| Width | 2.39mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 16A |
| Maximum Drain Source Voltage Vds | 110V |
| Maximum Drain Source Resistance Rds | 0.12mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 79W |
| Typical Gate Charge Qg @ Vgs | 44nC |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- This MOSFET features very low on-resistance of 0.12 mΩ for efficient power handling.
- It supports a maximum power dissipation of 79 W for robust operation.
- The device is designed for surface mounting and includes 3 pins in TO-252 package.
- Operating temperature ranges from -55°C to a maximum of 175°C, allowing versatile thermal conditions.
- Maximum gate source voltage rated at 20 V enhances reliability in switching applications.
- Typical gate charge of 44 nC enables fast switching speeds suitable for high-frequency circuits.
- Compact dimensions with length 6.73 mm, width 2.39 mm, and height 6.22 mm make it ideal for space-constrained designs.
- HEXFET technology ensures ruggedness and fast switching capabilities for power electronics.
Product Description
Infineon IRFR3910TRLPBF is a HEXFET® N-Channel power MOSFET designed for efficient and reliable power switching in a wide array of industrial and electronic applications. Rated for a continuous drain current of 16 A and a drain-source voltage of 110 V, this transistor offers enhanced performance with a low on-resistance of 0.12 milliohm, minimizing power losses and heat generation.
Encapsulated in a 3-pin TO-252 surface-mount package, this MOSFET is suitable for compact circuit board layouts while supporting a maximum power dissipation of 79 W. Its robust design is capable of operating from -55°C to 175°C, making it dependable for harsh environmental and thermal conditions common in automotive, industrial automation, and power supply applications.
The device’s typical gate charge of 44 nanocoulombs at rated gate voltage affords fast switching speeds, contributing to overall system efficiency in high-frequency and PWM circuits. The maximum gate-source voltage is 20 V, providing a good margin for gate drive voltages in most power electronics designs.
Infineon’s advanced process technology and rugged HEXFET design ensure dynamic dv/dt rating and full avalanche robustness, which enhances durability under inductive load switching. This MOSFET is an excellent choice for industrial power management, motor control, DC/DC converters, and switch-mode power supplies in medical, telecommunications, and automotive sectors.
This MOSFET exhibits extremely low on-resistance for energy-efficient operation. Designed for surface mount technology with a compact TO-252 package. Wide operating temperature range ensures reliability under varying conditions.
Advanced HEXFET technology supports robust and fast switching. Suitable for industrial, automotive, power supply, and electronic applications.
This product offers a reliable solution for engineers looking to optimize power efficiency and thermal performance in electronic circuits. Browse more Infineon MOSFETs and power components in the Electronics & Electricals category on EnvMart for expanded power control solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 16 A.
This MOSFET has a maximum drain-source voltage rating of 110 V.
It features a very low on-resistance of 0.12 mΩ, which aids in efficient power handling.
The maximum power dissipation for this MOSFET is 79 W, allowing for robust operation.
The dimensions of the TO-252 package are 6.73 mm in length, 2.39 mm in width, and 6.22 mm in height.
The typical gate charge at rated gate voltage is 44 nC, enabling fast switching speeds.
It operates within a temperature range of -55°C to 175°C, making it suitable for various thermal conditions.
The maximum gate-source voltage for this device is rated at 20 V, enhancing reliability in switching applications.
This model includes 3 pins in its TO-252 package, designed for surface mounting.
It features an N-channel configuration, suitable for various power applications.
This device is part of the HEXFET series, known for its ruggedness and fast switching capabilities.
This MOSFET is suitable for industrial power management, motor control, DC/DC converters, and switch-mode power supplies.
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