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Infineon CoolMOS N-Channel MOSFET 8.5A 700V TO-220 Package 3-Pin IPAN70R600P7SXKSA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 29.87mm
Length 16.1mm
Model IPAN70R600P7SXKSA1
Width 4.8mm
Mount Type Through Hole
Series CoolMOS
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -40°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 8.5A
Maximum Drain Source Voltage Vds 700V
Maximum Drain Source Resistance Rds 600mΩ
Channel Mode N
Maximum Power Dissipation Pd 82W
Typical Gate Charge Qg @ Vgs 20.5nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 900mV

Key Features

  • Designed for high efficiency and excellent thermal performance.
  • Supports through-hole mounting in electronic circuits.
  • Features low gate charge for fast switching.
  • Integrated protection Zener diode enhances device robustness.
  • Operates within temperature range from -40°C to 150°C.
  • Ideal for low power SMPS applications like mobile phone chargers and notebook adapters.
  • Offers low RDS(on) resistance for reduced conduction losses.
  • Typical forward voltage of 900mV ensures optimal operation.

Product Description

Infineon IPAN70R600P7SXKSA1 CoolMOS N-Channel MOSFET, rated at 8.5 A continuous drain current and 700 V maximum drain-source voltage, is housed in a 3-pin TO-220 package designed for through-hole mounting. This device belongs to the CoolMOS P7 superjunction MOSFET series, engineered to meet the demands of low power switch-mode power supply (SMPS) markets such as mobile phone chargers and notebook adapters.

The technology delivers fundamental performance improvements compared to earlier superjunction MOSFETs, focusing on high efficiency and superior thermal behavior. Its low figure of merit (FOM) with RDS(on) x Eoss values results in lower switching and conduction losses, contributing to better energy efficiency and heat dissipation. The device features a tightly controlled gate threshold voltage (3 V typical with ±0.5 V tolerance) and integrates a protection Zener diode for enhanced reliability.

Operating tolerances range from -40°C minimum to 150°C maximum, making it suitable for various industrial, electronic, and power management applications. Its package dimensions are compact with a length of 16.1 mm, width of 4.8 mm, and height of 29.87 mm, fitting standard TO-220 mounting requirements.

High efficiency with low switching and conduction losses. Optimized for low power SMPS applications. Excellent thermal performance and EMI behavior. Robust device with integrated protection Zener diode. Wide operating temperature range for reliable use.

Compact TO-220 three-pin form factor for easy mounting.

This MOSFET is ideal for industrial, electronics manufacturing, power supply engineering, and HVAC applications requiring efficient high-voltage switching components. Infineon’s CoolMOS technology supports cutting-edge designs with improved performance and reliability.

Explore further components in the MOSFET category at EnvMart for related semiconductors and discrete devices.

Infineon CoolMOS N-Channel MOSFET 8.5A 700V TO-220 Package 3-Pin IPAN70R600P7SXKSA1
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Frequently Asked Questions

The maximum continuous drain current for the Infineon CoolMOS N-Channel MOSFET is 8.5 A.

This model can handle a maximum drain-source voltage of 700 V.

The typical gate charge for this MOSFET is 20.5 nC at Vgs.

The maximum drain-source resistance (RDS(on)) for this device is 600 mΩ.

The dimensions of the TO-220 package are 16.1 mm in length, 4.8 mm in width, and 29.87 mm in height.

This MOSFET operates within a temperature range of -40°C to 150°C.

This model supports through-hole mounting in electronic circuits.

The maximum power dissipation for this MOSFET is 82 W.

Yes, it features an integrated protection Zener diode that enhances device robustness.

This MOSFET is ideal for low power switch-mode power supply (SMPS) applications, such as mobile phone chargers and notebook adapters.

The maximum gate-source voltage for this device is 20 V.

This MOSFET belongs to the CoolMOS P7 series, designed for high efficiency and excellent thermal performance.

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