Infineon HEXFET N-Channel MOSFET 80 V, 55 A, Enhancement Mode, 7-Pin DirectFET IRF6668TRPBF

Infineon IRF6668TRPBF HEXFET N-Channel MOSFET is a high-performance enhancement mode transistor designed for efficient power switching and energy management. With a maximum continuous drain current of 55 A and a drain-source voltage rating of 80 V, it is ideal for industrial and commercial electronic applications requiring robust power handling and reliable performance.

The component is housed in a DirectFET MZ package featuring 7 pins and a slim 0.7 mm profile. This package design minimizes footprint on printed circuit boards while offering superior heat dissipation through dual-sided cooling, improving thermal resistance by approximately 80% compared to traditional packages.

This MOSFET exhibits a low maximum drain-source resistance of 15 milliohms, contributing to reduced conduction losses and improved energy efficiency in power circuits. The device supports operating temperatures ranging from -55°C to 175°C, making it suitable for use in harsh industrial environments.

The typical gate charge of 31 nanocoulombs and a maximum gate-source voltage of 20 V ensures swift switching performance and device protection. A maximum power dissipation of 89 W allows this transistor to handle demanding load conditions reliably.

Designed to meet environmental compliance, this MOSFET is lead-free and qualified for solder reflow processes up to 260°C. It is especially optimized for applications such as synchronous rectification, isolated converter primary switches, and other high-performance power switching tasks.

Supports a maximum continuous drain current of 55 A for robust power handling. Operates at a maximum drain-source voltage of 80 V ensuring suitability for mid-voltage applications. Features a low on-resistance of 15 milliohms reducing conduction losses.

Encapsulated in a 7-pin DirectFET package with a compact 0.7 mm profile for efficient PCB mounting. Capable of withstanding temperatures from -55°C up to 175°C for reliable operation in harsh environments. Optimized for enhancement mode with a typical gate charge of 31 nC, enabling fast switching.

Includes a maximum gate-source voltage rating of 20 V to protect against gate overstress. Power dissipation capability of up to 89 W suitable for demanding industrial uses. DirectFET package allows dual-sided cooling to maximize thermal transfer and improve reliability.

Lead-free design qualified for reflow soldering temperatures up to 260°C for compliance with environmental standards.

This Infineon MOSFET is highly suitable for industrial, commercial, and electronics manufacturing sector applications requiring durable and efficient semiconductor components. Explore more products in our MOSFET category at EnvMart.