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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.5mm |
| Length | 5mm |
| Model | IRF7311TRPBF |
| Width | 4mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SO-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 1 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 6.6A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 29mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2W |
| Typical Gate Charge Qg @ Vgs | 18nC |
| Maximum Gate Source Voltage Vgs | 12V |
| Forward Voltage Vf | 0.72V |
| Transistor Configuration | Dual |
Infineon IRF7311TRPBF Dual HEXFET N-Channel MOSFET is a high-efficiency semiconductor device designed for power-switching applications. Featuring a dual transistor configuration with advanced fifth generation HEXFET technology, it provides ultra-low on-resistance and fast switching capabilities. This device is packaged in an 8-pin SO-8 surface mount package with optimized lead frame for enhanced thermal conduction and multiple-die capability.
Its maximum continuous drain current of 6.6 A and drain-source voltage of 20 V make it suitable for a wide range of electronic systems requiring efficient power management. Typical gate charge of 18 nC ensures rapid switching, while the device withstands gate-source voltages up to 12 V. The MOSFET operates reliably in harsh environments with an operating temperature range from -55°C to 150°C.
Compact dimensions of 5 mm length, 4 mm width, and 1.5 mm height allow for space-saving PCB design. The transistor's extremely low drain-source resistance of 29 milliohms helps reduce conduction losses and improve overall efficiency in power conversion circuits.
The device is fully avalanche rated, providing robust protection against voltage transients, and is well suited for industrial, electronic, automotive, and power management applications. The advanced package design supports vapor phase and infrared wave soldering techniques, making it compatible with modern manufacturing processes.
Dual N-channel enhancement mode MOSFET configuration for robust performance. Low on-resistance of 29 milliohms reduces power loss. Maximum power dissipation rated at 2 watts. Surface mount SO-8 package with 8 pins for efficient PCB layout.
Wide temperature operation from -55°C to 150°C enhances reliability. Fast switching with typical gate charge of 18 nanocoulombs. Maximum gate-source voltage rating is 12 volts. Compact device dimensions of 5x4x1.5 mm optimize space.
Fully avalanche rated for protection in power applications. Suitable for industrial, electronic, and automotive power management uses. Explore our complete range of MOSFETs and power semiconductor devices for your next project on EnvMart, ensuring reliable and efficient electronic component sourcing.
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