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Infineon Dual HEXFET N-Channel MOSFET 20 V, 6.6 A, 8-Pin SO-8 IRF7311TRPBF

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 1.5mm
Length 5mm
Model IRF7311TRPBF
Width 4mm
Mount Type Surface
Series HEXFET
Maximum Operating Temperature 150°C
Package Type SO-8
Minimum Operating Temperature -55°C
Pin Count 8
Number of Elements per Chip 1
Channel Type N
Maximum Continuous Drain Current Id 6.6A
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 29mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 2W
Typical Gate Charge Qg @ Vgs 18nC
Maximum Gate Source Voltage Vgs 12V
Forward Voltage Vf 0.72V
Transistor Configuration Dual

Key Features

  • Dual N-channel enhancement mode MOSFET configuration provides robust switching performance.
  • Extremely low drain-source resistance of 29 milliohms minimizes power loss.
  • Operates efficiently with a maximum power dissipation of 2 watts.
  • Suitable for surface mount applications with SO-8 package and 8 pins.
  • Wide operating temperature range from -55°C to 150°C for reliable industrial use.
  • Typical gate charge of 18 nanocoulombs supports fast switching speeds.
  • Maximum gate-source voltage rating is 12 volts ensuring device protection.
  • Compact dimensions with 5 mm length, 4 mm width, and 1.5 mm height optimize PCB space.

Product Description

Infineon IRF7311TRPBF Dual HEXFET N-Channel MOSFET is a high-efficiency semiconductor device designed for power-switching applications. Featuring a dual transistor configuration with advanced fifth generation HEXFET technology, it provides ultra-low on-resistance and fast switching capabilities. This device is packaged in an 8-pin SO-8 surface mount package with optimized lead frame for enhanced thermal conduction and multiple-die capability.

Its maximum continuous drain current of 6.6 A and drain-source voltage of 20 V make it suitable for a wide range of electronic systems requiring efficient power management. Typical gate charge of 18 nC ensures rapid switching, while the device withstands gate-source voltages up to 12 V. The MOSFET operates reliably in harsh environments with an operating temperature range from -55°C to 150°C.

Compact dimensions of 5 mm length, 4 mm width, and 1.5 mm height allow for space-saving PCB design. The transistor's extremely low drain-source resistance of 29 milliohms helps reduce conduction losses and improve overall efficiency in power conversion circuits.

The device is fully avalanche rated, providing robust protection against voltage transients, and is well suited for industrial, electronic, automotive, and power management applications. The advanced package design supports vapor phase and infrared wave soldering techniques, making it compatible with modern manufacturing processes.

Dual N-channel enhancement mode MOSFET configuration for robust performance. Low on-resistance of 29 milliohms reduces power loss. Maximum power dissipation rated at 2 watts. Surface mount SO-8 package with 8 pins for efficient PCB layout.

Wide temperature operation from -55°C to 150°C enhances reliability. Fast switching with typical gate charge of 18 nanocoulombs. Maximum gate-source voltage rating is 12 volts. Compact device dimensions of 5x4x1.5 mm optimize space.

Fully avalanche rated for protection in power applications. Suitable for industrial, electronic, and automotive power management uses. Explore our complete range of MOSFETs and power semiconductor devices for your next project on EnvMart, ensuring reliable and efficient electronic component sourcing.

Infineon Dual HEXFET N-Channel MOSFET 20 V, 6.6 A, 8-Pin SO-8 IRF7311TRPBF
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Frequently Asked Questions

The maximum continuous drain current for this model is 6.6 A.

This MOSFET has a maximum drain-source voltage rating of 20 V.

The dimensions of this unit are 5 mm in length, 4 mm in width, and 1.5 mm in height.

The typical gate charge is 18 nanocoulombs (nC).

The maximum power dissipation is rated at 2 watts.

It operates within a temperature range from -55°C to 150°C.

This model is packaged in an 8-pin SO-8 surface mount package.

The on-resistance is extremely low at 29 milliohms.

The maximum gate-source voltage rating is 12 V.

This configuration is suitable for industrial, electronic, automotive, and power management applications.

Yes, the typical gate charge of 18 nC supports fast switching speeds.

The country of origin for this MOSFET is India.

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