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STMicroelectronics N-Channel Power MOSFET, 25 V, 5.5 A, 6 W, Surface Mount, 3-Pin SOT-223 STN6N60M2
Specifications
| Country of Origin | China |
|---|---|
| Brand | STMicroelectronics |
| Height | 1.8mm |
| Length | 6.8mm |
| Model | STN6N60M2 |
| Width | 6.48mm |
| Mount Type | Surface |
| Series | STN6N60M2 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 5.5A |
| Maximum Drain Source Voltage Vds | 25V |
| Maximum Drain Source Resistance Rds | 1.25Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 6W |
| Typical Gate Charge Qg @ Vgs | 6nC |
| Maximum Gate Source Voltage Vgs | 25V |
| Forward Voltage Vf | 1.6V |
Key Features
- Utilizes MDmesh M2 technology for low on-resistance and optimized switching.
- Has a maximum power dissipation of 6 watts for reliable operation.
- Comes in a compact 3-pin SOT-223 surface mount package.
- Features low gate charge at 6 nC, enabling fast switching.
- Operates effectively between -55°C and 150°C temperature range.
- Maximum drain source resistance of 1.25 Ω ensures efficient conduction.
- Includes zener protection for reliability and is 100% avalanche tested.
- Designed for use in industrial, power management, and electronic converter applications.
Product Description
STMicroelectronics STN6N60M2 is a high-performance N-Channel Power MOSFET featuring a maximum continuous drain current of 5.5 A and a maximum drain source voltage of 25 V. This device employs advanced MDmesh M2 technology, which combines a strip layout and an improved vertical structure to deliver low on-resistance and optimized switching characteristics suitable for demanding high efficiency converters.
The MOSFET comes housed in a 3-pin SOT-223 surface mount package, making it appropriate for modern PCB assembly processes. It supports a maximum power dissipation of 6 watts and operates in a wide temperature range from -55°C up to 150°C, ensuring robustness in various industrial environments.
Key attributes include a low typical gate charge of 6 nC at Vgs, a maximum drain source resistance of 1.25 Ω, and a forward voltage of 1.6 V, which collectively contribute to efficient power management and minimal losses during switching operations. The device is zener protected and 100% avalanche tested, enhancing reliability and longevity in application.
This MOSFET is ideally suited for use in power electronic circuits, including DC-DC converters, power supplies, motor controls, and other applications requiring efficient switching and power handling capabilities.
Utilizes MDmesh M2 technology for low on-resistance and optimized switching. Maximum continuous drain current of 5.5 A supports moderate power loads. Compact 3-pin SOT-223 surface mount packaging for space-saving design.
Wide operating temperature range from -55°C to 150°C ensures reliability. Low gate charge improves switching efficiency and reduces losses. Zener-protected and fully avalanche tested for enhanced durability. Suitable for industrial, electronic, and power management applications.
Manufactured in China adhering to strict quality standards. Explore more high-quality MOSFET components and electronic semiconductors at EnvMart for your industrial and manufacturing needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 5.5 A.
The maximum drain source voltage is 25 V.
It has a maximum power dissipation rating of 6 watts.
This model comes in a compact 3-pin SOT-223 surface mount package.
It operates effectively within a temperature range of -55°C to 150°C.
The typical gate charge at Vgs is 6 nC.
The maximum drain source resistance is 1.25 Ω.
This MOSFET is suitable for power electronic circuits, including DC-DC converters, power supplies, and motor controls.
It includes zener protection and is 100% avalanche tested for enhanced reliability.
The dimensions are 6.8 mm in length, 6.48 mm in width, and 1.8 mm in height.
The channel type is N-channel, and it operates in enhancement mode.
The forward voltage is 1.6 V.
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