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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.15mm |
| Length | 5mm |
| Model | NTMYS014N06CLTWG |
| Width | 4.25mm |
| Mount Type | Surface |
| Series | NTMYS014N06CL |
| Maximum Operating Temperature | 175°C |
| Package Type | LFPAK |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 36A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 21.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 37W |
| Typical Gate Charge Qg @ Vgs | 9.7nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
onsemi NTMYS014N06CLTWG is an industrial N-Channel MOSFET in a compact LFPAK surface mount package optimized for power semiconductor applications.
This device delivers a maximum continuous drain current of 36 A and can handle drain-to-source voltages up to 60 V. Its low on-resistance of 21.5 mΩ minimizes conduction losses, improving overall circuit efficiency.
The MOSFET features a typical gate charge of 9.7 nC at Vgs, enabling low switching losses and fast operation. It supports maximum power dissipation up to 37 W and can operate in a wide temperature range from -55°C to 175°C, making it suitable for demanding industrial environments.
The LFPAK package measuring 5 mm in length, 4.25 mm width, and 1.15 mm height occupies minimal PCB area while providing high thermal performance. It is a four-pin device constructed using enhancement channel mode semiconductor technology to ensure reliable switching.
This part is Pb-free and RoHS compliant, supporting environmentally responsible manufacturing processes. Its typical forward voltage is 1.2 V and it can tolerate gate-source voltages up to 20 V. The surface mount geometry enables automated assembly and compact designs.
Applications include industrial power supplies, motor drivers, and switching regulators in automotive, industrial automation, and power management systems. Maximum continuous drain current of 36 amperes. Drain-source voltage rating of 60 volts.
Low on-resistance 21.5 milliohms. Maximum power dissipation rating of 37 watts. Wide operating temperature range (-55°C to 175°C). Compact LFPAK surface mount package (5 x 4.25 x 1.15 mm). Enhancement mode N-channel MOSFET technology.
Typical gate charge 9.7 nC for efficient switching. Maximum gate-source voltage 20 V. Lead-free and RoHS compliant construction.
Explore more Power MOSFET devices and semiconductor components at EnvMart for industrial and commercial applications, offering reliable and efficient solutions for modern electronic designs.
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