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onsemi N-Channel Enhancement MOSFET 36 A 650 V TO-247 Package NTHL095N65S3HF
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 20.82mm |
| Length | 15.87mm |
| Model | NTHL095N65S3HF |
| Width | 4.82mm |
| Mount Type | Through Hole |
| Series | NTHL |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 36A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 95mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 272W |
| Typical Gate Charge Qg @ Vgs | 66nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.3V |
Key Features
- Maximum continuous drain current of 36 A enables high current applications.
- Maximum drain-source voltage of 650 V suitable for high voltage circuits.
- Low typical gate charge (66 nC) minimizes switching losses.
- Enhanced channel mode provides efficient switching performance.
- Package type TO-247 ensures ease of mounting and heat dissipation.
- Maximum power dissipation of 272 W supports demanding power loads.
- Operating temperature range from -55°C to 150°C ensures reliability in harsh environments.
- Forward voltage of 1.3 V for effective conduction.
Product Description
onsemi NTHL095N65S3HF is an N-Channel Enhancement MOSFET designed for high voltage and high current power applications. Operating with a maximum continuous drain current of 36 A and a maximum drain-source voltage of 650 V, this device is housed in a TO-247 package which facilitates through-hole mounting and efficient thermal management.
Featuring a low typical gate charge of 66 nC, the MOSFET minimizes conduction losses and improves switching speeds. The enhancement mode channel type ensures effective gate control and switching reliability across a wide operating temperature range from -55°C to 150°C, making it suitable for extreme environmental conditions.
This MOSFET offers a maximum power dissipation of 272 W and a forward voltage of 1.3 V, enabling it to handle demanding industrial loads with high efficiency. Its compact size with height 20.82 mm, length 15.87 mm, and width 4.82 mm allows integration into space-constrained designs.
It incorporates ON Semiconductor's SUPERFET III technology with charge balance for low on-resistance and superior switching characteristics. The optimized body diode reverse recovery performance improves overall system reliability by removing the need for additional components.
Typical applications include telecommunications power supplies, cloud systems, industrial electronics, electric vehicle chargers, solar power units, and uninterruptible power supplies (UPS).
Maximum continuous drain current: 36 A. Maximum drain-source voltage: 650 V. Package: TO-247. Maximum power dissipation: 272 W. Low gate charge for reduced switching losses. Wide operating temperature range: -55°C to 150°C.
Compact dimensions for flexible installation. Enhancement type channel with low Rds(on) of 95 mΩ.
Enhance your power system designs with the reliability and efficiency of the onsemi NTHL095N65S3HF MOSFET. Explore related MOSFET products in the Electronics & Electricals category at EnvMart.
Explore more products in our Power MOSFET category.
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Frequently Asked Questions
The maximum continuous drain current for the onsemi NTHL095N65S3HF is 36 A.
It can handle a maximum drain-source voltage of 650 V.
The typical gate charge is 66 nC, which helps minimize switching losses.
The maximum power dissipation is 272 W, allowing it to support demanding power loads.
The operating temperature range is from -55°C to 150°C, ensuring reliability in harsh environments.
This model uses a TO-247 package type, which facilitates through-hole mounting and heat dissipation.
The dimensions are 20.82 mm in height, 15.87 mm in length, and 4.82 mm in width.
The forward voltage is 1.3 V, which is effective for conduction.
It features an N-channel type, which is designed for enhancement mode operation.
The maximum gate-source voltage is 30 V.
Typical applications include telecommunications power supplies, industrial electronics, and electric vehicle chargers.
The maximum drain-source resistance is 95 mΩ, contributing to its efficiency.
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