onsemi Dual 2 N-Channel Power MOSFET, 42 A, 60 V Enhancement Mode, 8-Pin DFN Package NTMFD5C674NLT1G

onsemi NTMFD5C674NLT1G Dual 2 N-Channel Power MOSFET provides high-performance power switching with a maximum continuous drain current of 42 A and drain-source voltage up to 60 V in a compact 8-pin DFN surface-mount package. Its enhancement-mode channel ensures efficient conduction and switching characteristics vital for industrial and commercial electronics.

This MOSFET features a low drain-source resistance (Rds) of 14.4 mΩ and a maximum power dissipation of 37 W, making it suitable for applications requiring minimal conduction losses and robust load handling. The device operates safely across a broad temperature spectrum from -55°C to +175°C, supporting demanding environments.

Designed with a dual transistor configuration and 2 elements per chip, it allows compact and efficient PCB layouts. With dimensions 5.1 mm length, 6.1 mm width, and height of 1.05 mm, it fits space-conscious designs. Maximum gate-source voltage is 20 V with typical gate charge of 4.7 nC.

Common industrial applications include motor control, synchronous DC-DC regulators, high-side and low-side power switches, H-bridge circuits, battery management and protection systems, power supplies, rotary drones, and power tools. Its compact design and high current capability make it suitable for Power over Ethernet (PoE) devices as well.

Manufactured in Malaysia, this onsemi MOSFET meets industrial and electronic component standards without additional certifications or automotive approvals. The DFN package format ensures excellent thermal performance for sustained high power operation in HVAC, manufacturing, and commercial electronic systems.

Features a maximum continuous drain current of 42 amperes. Operates at a maximum drain-source voltage of 60 volts. Employs enhancement-mode channel configuration ensuring robust switching performance. Packaged in a compact 8-pin DFN surface-mount footprint measuring 5.1mm x 6.1mm.

Offers low drain-source resistance of 14.4 milliohms minimizing conduction losses. Supports high power dissipation up to 37 watts for demanding applications. Operates reliably in temperatures ranging from -55°C to +175°C.

Dual transistor configuration with two elements per chip optimizes space and efficiency. Applications include motor control, synchronous DC-DC regulation, power switches, and battery management. Manufactured in Malaysia, ensuring quality and industrial grade standards.

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