onsemi PNP Power Transistor TO-252 Surface Mount -8 A Collector Current, -80 V Collector Emitter Voltage MJD45H11T4G

The onsemi MJD45H11T4G is a PNP power transistor designed for efficient switching and amplification in various electronic circuits. Featuring a TO-252 surface mount package, it supports a maximum DC collector current of -8 A and a collector emitter voltage of -80 V, making it suitable for power management applications in industrial, automotive, and consumer electronics.

This transistor offers a maximum power dissipation of 1.75 watts allowing robust performance under elevated temperatures with an operating temperature range from -55°C to 150°C. Its minimum current gain of 40 ensures stable and effective current amplification across operating conditions.

Qualified to the AEC-Q101 automotive standard, the MJD45H11T4G is suitable for automotive electronic systems requiring high reliability and durability. Its transition frequency of 90 MHz supports high-speed switching applications.

The device has a compact form factor with dimensions of 8.5 mm height, 6.73 mm length, and 2.38 mm width, compliant with industry mounting and packaging standards. It is a single PNP transistor with a standard 3-pin layout, facilitating integration into existing circuit boards.

Surface mount TO-252 package promotes easy PCB assembly and heat dissipation. Robust electrical ratings promote use in power supply, motor control, and amplifier circuits. Wide temperature range supports use in harsh industrial and automotive environments.

High transition frequency benefits switching power circuits and signal processing. Reliable brand onsemi ensures quality and compliance with manufacturing standards.

Ideal for applications including industrial electronics, automotive controls, power supplies, and general-purpose amplification, the MJD45H11T4G transistor provides a reliable and efficient solution for power transistor demands. Browse more Power Transistors and related semiconductor products on EnvMart.