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Infineon OptiMOS 3 N-Channel MOSFET 300A 100V Enhancement 8-Pin HSOF IPT020N10N3ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.4mm |
| Length | 10.58mm |
| Model | IPT020N10N3ATMA1 |
| Width | 10.1mm |
| Mount Type | Surface |
| Series | OptiMOS 3 |
| Maximum Operating Temperature | 175°C |
| Package Type | HSOF |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 300A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 3.7mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 375W |
| Typical Gate Charge Qg @ Vgs | 156nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1V |
Key Features
- Features a maximum continuous drain current of 300 amperes.
- Rated for a maximum drain-source voltage of 100 volts for robust operation.
- Utilizes an 8-pin HSOF surface mount package for efficient PCB integration.
- Low drain-source resistance of 3.7 milliohms for improved efficiency.
- Supports enhancement channel mode for reliable switching performance.
- Can dissipate up to 375 watts of power under maximum conditions.
- Operates over a wide temperature range from -55°C to 175°C.
- Includes a typical gate charge of 156 nanocoulombs at gate-source voltage.
Product Description
Infineon IPT020N10N3ATMA1 is a high-performance OptiMOS 3 N-Channel MOSFET designed for industrial, power management, and electronic applications requiring efficient switching and high current handling.
This 8-pin HSOF surface mount device supports a maximum continuous drain current of 300 A and a drain-source voltage rating of 100 V, suitable for power conversion and motor control systems.
Its low on-resistance of 3.7 mΩ and a power dissipation of 375 W contribute to high efficiency and thermal stability during operation.
Designed for harsh environments, it operates reliably between -55°C and 175°C, making it viable for automotive and industrial use where wide temperature ranges and durability are critical.
The MOSFET has a typical gate charge of 156 nC at Vgs and supports enhancement channel mode for precise switching characteristics. Compact package dimensions with a length of 10.58 mm, width of 10.1 mm, and height of 2.4 mm allow space-efficient PCB layouts.
Maximum continuous drain current of 300 A provides high power handling capacity. Drain-source voltage rating of 100 V accommodates powerful switching loads. Low Rds(on) of 3.7 mΩ reduces conduction losses. Surface mount 8-pin HSOF package enables easy assembly.
Capable of dissipating 375 W power under heavy load. Wide operational temperature range from -55°C to 175°C ensures reliable performance. Enhancement mode operation tailored for digital control systems. Gate-source voltage tolerance of ±20 V for safe driving.
Typical gate charge of 156 nC minimizes switching losses. Compact footprint supports dense electronic assemblies. This MOSFET is ideal for industrial electronics, automotive power controls, and manufacturing equipment requiring robust, efficient semiconductor switching components.
Explore our wide selection of Infineon power semiconductors and MOSFETs at EnvMart for high-quality industrial applications.
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Frequently Asked Questions
The maximum continuous drain current of this model is 300 amperes.
It has a maximum drain-source voltage rating of 100 volts.
The low drain-source resistance is 3.7 milliohms, which helps improve efficiency.
This MOSFET can dissipate up to 375 watts of power under maximum conditions.
It operates over a wide temperature range from -55°C to 175°C.
It utilizes an 8-pin HSOF surface mount package for efficient PCB integration.
The typical gate charge is 156 nanocoulombs at gate-source voltage.
This model supports enhancement channel mode for reliable switching performance.
The dimensions are 10.58 mm in length, 10.1 mm in width, and 2.4 mm in height.
It has a maximum gate-source voltage tolerance of ±20 volts for safe driving.
It is suitable for industrial electronics, automotive power controls, and manufacturing equipment requiring efficient switching.
The country of origin for this MOSFET is India.
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