onsemi Small Signal NPN Bipolar Transistor TO-92 Package, 200 mA DC Collector Current, 40 V Collector Emitter 2N3904BU

The onsemi 2N3904BU is a small signal NPN bipolar junction transistor designed for a variety of signal amplification and low power switching tasks in electronic circuitry. Its compact TO-92 package allows for easy through-hole mounting, making it suitable for prototyping and production boards.

This transistor features a maximum DC collector current of 200 mA and collector emitter voltage of 40 V, giving it the capability to operate in circuits requiring moderate current and voltage handling abilities. Its maximum power dissipation of 625 mW supports continuous operation within safe thermal limits.

The device provides a minimum DC current gain (hFE) of 15, ensuring effective amplification of input signals across a broad range of applications including audio, switching, and signal processing electronics. It operates reliably across a wide temperature range from -55°C to 150°C, allowing usage in harsh environmental conditions commonly encountered in automotive, industrial, and commercial electronics.

The maximum transition frequency of 100 MHz enables the 2N3904BU to handle relatively high frequency signals, suitable for RF circuits and fast switching applications. The transistor's three-pin configuration includes standard base, collector, and emitter leads, facilitating straightforward circuit connections.

Its precise dimensioning, with height 18.03 mm, width 4.19 mm, and length 5.2 mm, supports efficient PCB layout optimization. Features a maximum DC collector current of 200 mA for efficient switching. Operates at a maximum collector emitter voltage of 40 V to handle moderate voltage levels.

Packaged in a TO-92 through-hole mount type for easy PCB integration. Has a maximum power dissipation rating of 625 mW suitable for low power applications. Provides a minimum DC current gain (hFE) of 15 enhancing amplification capabilities.

Supports an operating temperature range from -55°C to 150°C for reliable performance. Includes 3 pins in a standard single transistor configuration. Built with NPN transistor polarity for versatile electronic design compatibility.

Ensures a maximum transition frequency of 100 MHz for high-speed signal processing. Compact dimensions with a height of 18.03 mm, width 4.19 mm, and length 5.2 mm.

This transistor is widely applicable in industrial, automotive, electronic manufacturing, instrumentation, consumer electronics, and laboratory development environments, meeting diverse needs for reliable bipolar junction transistor performance.

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