STMicroelectronics N-Channel IGBT 7.5 A 600 V 3-Pin TO-220 Through Hole STGP3HF60HD

The STMicroelectronics STGP3HF60HD is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for efficient power switching applications. This discrete semiconductor device combines the simple gate drive characteristics of MOSFETs with the high-current and low-saturation-voltage capabilities of bipolar transistors, integrating these technologies into a single package. It is constructed with a 3-pin TO-220 package and supports through hole mounting, facilitating easy insertion into printed circuit boards.

Operating at a maximum continuous collector current of 7.5 amperes and a maximum collector-emitter voltage of 600 volts, this IGBT is suitable for a variety of industrial and electronic applications requiring reliable switching power devices. The maximum power dissipation rating is 38 watts, allowing this component to manage significant thermal loads when properly cooled.

It supports operating temperatures from -55°C to 150°C, ensuring stable operation in harsh environments. The IGBT features a maximum gate-emitter voltage of ±20 volts and a low collector-emitter saturation voltage of 2.95 volts, enhancing energy efficiency and control precision in power switching circuits.

This product complies with RoHS standards, making it suitable for environmentally conscious manufacturing processes. Its discrete 3-pin configuration provides straightforward implementation in semiconductor electronics.

This STMicroelectronics IGBT is ideal for applications in power management, industrial controls, motor drives, and other electronic devices requiring robust, fast-switching transistor components. Its through hole package supports secure mounting in diverse system architectures.

High efficiency insulated gate bipolar transistor suitable for power switching applications. Rated maximum continuous collector current is 7.5 amperes. Maximum collector-emitter voltage of 600 volts ensures robust operation.

Package type is TO-220 with through hole mounting for easy PCB integration. Operates safely between -55°C and 150°C temperature range. Maximum power dissipation is 38 watts for thermal management. Features a maximum gate-emitter voltage rating of ±20 volts.

Low collector-emitter saturation voltage of 2.95 volts for energy efficiency. 3-pin configuration designed for discrete semiconductor use. Complies with RoHS environmental standards. Explore more electronic components and power management solutions at EnvMart to enhance your industrial and laboratory designs with trusted STMicroelectronics products.