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DiodesZetex NPN Transistor BC847AW-7-F 100 mA 45 V 3-Pin SOT-323 Surface Mount BC847AW-7-F

Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.1mm
Length 2.2mm
Model BC847AW-7-F
Width 2.2mm
Mount Type Surface
Series BC847AW
Maximum Operating Temperature 150°C
Package Type SOT-323
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 45V
Minimum DC Current Gain hFE 110
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 200mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • This transistor features a compact SOT-323 surface mount package suitable for PCB assembly.
  • Capable of operating at a maximum power dissipation of 200 mW with a transition frequency of up to 100 MHz.
  • Offers a minimum DC current gain (hFE) of 110 ensuring reliable amplification performance.
  • Complies with automotive standard AEC-Q101 for enhanced reliability in automotive applications.
  • Operates efficiently over a wide temperature range from -65°C to 150°C.
  • Three-pin configuration facilitates easy mounting on printed circuit boards using surface mount technology.

Product Description

DiodesZetex BC847AW-7-F NPN transistor is a versatile small signal discrete semiconductor designed primarily for amplification and switching in electronic circuits. This transistor supports a maximum collector current of 100 mA and a maximum collector emitter voltage of 45 V, offering robust handling of signal and power levels in compact designs.

The device is packaged in a SOT-323 surface mount style, featuring three pins arranged for simple integration into surface mount PCB layouts, enhancing manufacturing efficiency and space savings. Its maximum power dissipation rating of 200 mW allows deployment in moderate power applications without additional cooling measures.

With a high minimum DC current gain of 110 and a transition frequency up to 100 MHz, the transistor provides good gain bandwidth suitable for diverse signal processing tasks. The transistor polarity is NPN, making it ideal for standard low noise amplification designs.

Designed to withstand industrial conditions, it meets the stringent automotive grade AEC-Q101 standard, ensuring reliability in harsh environments. It operates over a temperature spectrum between -65°C and 150°C, supporting a broad range of commercial, industrial, and automotive electronics applications.

The compact dimensions (length 2.2 mm, width 2.2 mm, height 1.1 mm) facilitate integration into space-constrained devices and assemblies. Its 3-pin configuration and single transistor design optimize it for discrete transistor applications in analog and digital circuits.

This transistor is widely used in industrial, automotive, electronic control systems, and signal amplification circuits. Suitable for applications requiring small signal switching and low power high frequency operation. Comprehensive semiconductor solution for hobbyist and professional electronic design and manufacturing.

Explore more Bipolar Transistors and semiconductor devices at EnvMart, your trusted partner in electronic components.

DiodesZetex NPN Transistor BC847AW-7-F 100 mA 45 V 3-Pin SOT-323 Surface Mount BC847AW-7-F
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Frequently Asked Questions

The maximum collector current for this model is 100 mA.

The maximum collector-emitter voltage for the BC847AW-7-F is 45 V.

It has a maximum power dissipation rating of 200 mW.

This model features a transition frequency of up to 100 MHz.

The BC847AW-7-F operates efficiently over a temperature range from -65°C to 150°C.

This transistor is packaged in a SOT-323 surface mount style.

The minimum DC current gain (hFE) for this model is 110.

The transistor has a 3-pin configuration.

It complies with the automotive standard AEC-Q101 for enhanced reliability in automotive applications.

The height of this model is 1.1 mm.

The width and length of this transistor are both 2.2 mm.

The transistor polarity is NPN, making it suitable for low noise amplification designs.

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