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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 5.33mm |
| Length | 5.2mm |
| Model | J112 |
| Width | 4.19mm |
| Mount Type | Through Hole |
| Configuration | Single |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-92 |
| Sub Type | JFET |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Drain Source Resistance Rds | 50Ω |
| Maximum Power Dissipation Pd | 350mW |
| Maximum Gate Source Voltage Vgs | -35V |
| Drain Source Current Ids | 5 mA |
onsemi J112 is a single N-channel Junction Field Effect Transistor (JFET) designed for discrete semiconductor applications requiring low power dissipation and reliable switching capabilities. Packaged in the standard 3-pin TO-92 format, it features a maximum power dissipation of 350mW, making it ideal for efficient low current electronic designs.
This N-channel JFET supports a maximum drain source current of 5 mA and a maximum gate source voltage of -35V, suitable for precision signal amplification and switching tasks in industrial electronics, electronic instrumentation, and general semiconductor circuitry.
The device operates within a wide temperature span from -55°C to 150°C, ensuring dependable performance in harsh and variable environmental conditions encountered in manufacturing, automotive electronics, and laboratory equipment.
Its compact physical dimensions (Height: 5.33mm, Length: 5.2mm, Width: 4.19mm) enable easy through-hole PCB mounting. The device’s low drain source resistance of 50Ω promotes effective conduction with minimal losses.
The J112 is a core component in projects and products spanning industrial controls, electronic testing equipment, and educational laboratory use due to its simplicity and effectiveness. While it does not meet automotive standards, it is widely used in power management and signal processing applications.
Single N-channel JFET design ensures effective electronic switching. 3-pin TO-92 package supports easy PCB integration. Wide operating temperature range from -55°C to 150°C enhances versatility. Maximum power dissipation rating of 350mW suits low power circuits.
Maximum gate source voltage of -35V allows diverse voltage handling. Compact dimensions facilitate installation in compact electronics. Low drain source resistance of 50Ω reduces conduction losses. Ideal for industrial, laboratory, and teaching electronic applications.
This onsemi J112 device is essential for designers and engineers seeking a reliable JFET component for electronic circuits, particularly where low current and stable switching are required. Explore other semiconductor devices and discrete transistors in the same category on EnvMart for comprehensive component selection.
Explore more products in our Discrete Semiconductors category.
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