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| Country of Origin | Philippines |
|---|---|
| Brand | Nexperia |
| Height | 1.1mm |
| Length | 5mm |
| Model | PSMN9R5-30YLC,115 |
| Width | 4.1mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | SOT-669 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 44A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 12.1mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 34W |
| Typical Gate Charge Qg @ Vgs | 10.4nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
Nexperia PSMN9R5-30YLC,115 is a high-performance N-Channel MOSFET transistor designed for effective power switching and management. It supports a maximum continuous drain current of 44 A and a maximum drain-source voltage of 30 V, packaged in a compact 4-pin SOT-669 surface mount package. The device operates in enhancement mode, which is well-suited for modern electronic and power applications requiring efficient switching.
This MOSFET features a low drain-source resistance (12.1 mΩ) that reduces conduction losses and improves overall circuit efficiency. The typical gate charge of 10.4 nC at 10 V gate-source voltage enables rapid switching performance, critical for high-speed electronic circuits.
It is rated for a maximum power dissipation of 34 W, with an extended operating temperature range from -55°C to 175°C, allowing for reliable use across a wide spectrum of industrial, automotive, and commercial environments. The gate-source voltage tolerance of -20 V to +20 V provides robust gate protection against voltage spikes.
The MOSFET's small footprint (5 mm length, 4.1 mm width, 1.1 mm height) and surface mount packaging facilitate compact PCB layouts and ease of assembly in automated manufacturing workflows. Manufactured in the Philippines, it meets stringent quality control standards, ensuring product reliability.
Applications include power management, DC-DC converters, motor drives, and switching power supplies in industrial equipment, automotive electronics, and consumer devices. This device supports efficient energy use and thermal management for advanced electronic designs.
The MOSFET operates in enhancement mode for efficient switching. Maximum power dissipation is rated at 34 W ensuring robust thermal handling. Maximum drain-source resistance is 12.1 milliohms for low conduction loss. Gate charge of 10.4 nC at 10 V gate-source voltage supports fast switching.
Wide operating temperature range from -55°C to 175°C suits varied environments. Surface mount package with 4 pins enables compact PCB design. Device dimensions are 5 mm length, 4.1 mm width, and 1.1 mm height. Maximum gate-source voltage tolerance ranges from -20 V to +20 V for gate protection.
Manufactured in the Philippines to high-quality standards. Ideal for high-efficiency power management and switching applications. Browse EnvMart’s Electronics & Electricals category for more semiconductor devices and power components to fulfill your project and manufacturing requirements.
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