$0.71
$0.69
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
onsemi Isolated 2 Type N, Type P-Channel Power MOSFET, 3.9 A, 30 V Enhancement, 8-Pin SOIC SI4532DY
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.5mm |
| Length | 5mm |
| Model | SI4532DY |
| Width | 4mm |
| Mount Type | Surface |
| Maximum Operating Temperature | +150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | Type N, Type P |
| Maximum Continuous Drain Current Id | 3.9A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 190mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2W |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Transistor Configuration | Isolated |
Key Features
- Dual MOSFET configuration isolated as separate N and P channel devices.
- Maximum continuous drain current of 3.9 amperes for reliable power handling.
- 30 volts maximum drain-source voltage suitable for low voltage power applications.
- Enhanced ruggedness with a 190 milliohm maximum on-state resistance (Rds).
- Compact 8-pin SOIC surface mount package with dimensions 5 mm length, 4 mm width, 1.5 mm height.
- Wide operating temperature range from -55°C to +150°C for harsh environments.
- Maximum power dissipation rated at 2 watts to ensure thermal reliability.
- Maximum gate-source voltage of -20 to +20 volts to support robust switching.
Product Description
onsemi SI4532DY is a high-quality isolated dual power MOSFET featuring both Type N and Type P channels designed in an 8-pin SOIC surface mount package. This device is intended for efficient switching and power management in electronic circuits operating up to 30 volts and delivering continuous drain currents of 3.9 A.
Manufactured using proprietary DMOS technology by Fairchild Semiconductor, the SI4532DY ensures low on-state resistance of 190 milliohms combined with rugged and reliable performance. Its dual isolated transistor configuration allows separate control of N and P channel MOSFETs, enhancing flexibility in circuit designs.
This MOSFET operates in enhancement mode and supports a maximum gate-source voltage range from -20 V to +20 V, making it suitable for a variety of applications requiring robust switching capabilities. The device can safely dissipate up to 2 watts of power, enabling efficient thermal management in compact electronic assemblies.
Physically, the device fits into a small footprint with a package length of 5 mm, width of 4 mm, and height of 1.5 mm, ideal for space-constrained applications. Its wide operating temperature range from -55°C to +150°C guarantees reliable performance in industrial, automotive, and commercial electronic systems.
Typical uses of this power MOSFET include power supply control, motor drivers, load switches, and other semiconductor switching roles in environments demanding high performance and miniaturization.
Dual isolated Type N and Type P enhancement mode MOSFETs. Continuous drain current of 3.9 A and maximum drain-source voltage of 30 V. Low on-resistance of 190 mΩ for energy-efficient operation. Compact 8-pin SOIC surface mount package.
Wide temperature range from -55°C to +150°C for industrial reliability. Maximum power dissipation of 2 W ensures thermal stability. Gate voltage tolerance from -20 V to +20 V for versatile control. Manufactured with Fairchild's DMOS technology for fast switching and durability.
Applications include power management in industrial, automotive, and consumer electronics. Explore more Power MOSFET options and electronic components in EnvMart's comprehensive range for reliable and efficient electronic system design.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 3.9 amperes.
It has a maximum drain-source voltage of 30 volts, suitable for low voltage power applications.
The on-state resistance is a maximum of 190 milliohms, which aids in energy-efficient operation.
This device comes in an 8-pin SOIC surface mount package with dimensions of 5 mm length, 4 mm width, and 1.5 mm height.
It operates within a wide temperature range from -55°C to +150°C, making it suitable for harsh environments.
The maximum power dissipation is rated at 2 watts, ensuring thermal reliability during operation.
The maximum gate-source voltage is -20 to +20 volts, allowing for robust switching capabilities.
This model features 2 elements per chip, consisting of both Type N and Type P channels.
It uses a dual isolated configuration with enhancement mode for both N and P channel MOSFETs.
Typical applications include power supply control, motor drivers, and load switches in various electronic systems.
This model is designed for surface mounting, which is ideal for compact electronic assemblies.
The country of origin for this product is India.
Related Products
Other Products from this brand
$23.16
$20.22
-12.7%
New
Recently Viewed Products
$277.89
$269.55
-3%
New
$23.16
$20.22
-12.7%
New
$0.71
$0.69
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent