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onsemi Isolated 2 Type P, Type N-Channel Power MOSFET 510 mA, 60 V Enhancement Mode, 6-Pin SOT-23 NDC7001C
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1mm |
| Length | 3mm |
| Model | NDC7001C |
| Width | 1.7mm |
| Mount Type | Surface |
| Maximum Operating Temperature | +150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Number of Elements per Chip | 2 |
| Channel Type | Type P, Type N |
| Maximum Continuous Drain Current Id | 510mA |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 10Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 960mW |
| Typical Gate Charge Qg @ Vgs | 1.1nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.8V |
| Transistor Configuration | Isolated |
Key Features
- Utilizes ON Semi DMOS technology for fast switching and low on-state resistance.
- Features high saturation current and a high cell density design.
- Copper lead frame ensures superior thermal and electrical performance.
- Suitable for low-voltage, low-current switching and power supply applications.
- Operates from -55°C to +150°C with stable electrical characteristics.
- Compact SOT-23 package with dimensions 3 mm length, 1.7 mm width, and 1 mm height.
- Maximum continuous drain current of 510 mA with drain-source voltage up to 60 V.
- Enhancement mode transistor type with isolated configuration and typical gate charge of 1.1 nC.
Product Description
The onsemi NDC7001C is an isolated dual enhancement mode Power MOSFET featuring two complementary channels (Type P and Type N). Built using ON Semi's DMOS technology, this device ensures fast switching performance, low on-state resistance, and high reliability in demanding applications.
This MOSFET is packaged in a compact 6-pin SOT-23 surface mount configuration, making it ideal for space-constrained designs. Its copper lead frame delivers enhanced thermal conductivity and electrical capabilities, ensuring efficient operation under load.
The device supports a maximum continuous drain current of 510 mA and a maximum drain-source voltage of 60 V, making it suitable for low-voltage and low-current switching tasks. With maximum power dissipation rated at 960 mW, it can handle moderate power levels while maintaining stability.
Electrical performance is characterized by a typical gate charge (Qg) of 1.1 nC at the gate-source voltage, enabling fast switching with minimal losses. The maximum gate-source voltage rating of ±20 V provides robust drive capability without damaging the gate oxide.
The transistor's isolated configuration and enhancement mode operation offer flexibility in circuit design, particularly for power supply switching and low-voltage control circuits in industrial, commercial, and consumer electronics.
Uses DMOS technology for superior switching and conduction. High saturation current and high-density cell design improve efficiency. Compact SOT-23 6-pin package supports surface mounting and space-saving layouts. Thermally enhanced copper lead frame increases reliability and performance.
Device rated for operation from -55°C to +150°C accommodates harsh environmental conditions. Ideal for applications such as power supplies, low-voltage switching, and control circuits. Explore our extensive catalog for more onsemi power semiconductor components optimized for industrial and electronic designs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 510 mA.
It can handle a maximum drain-source voltage of 60 V.
The typical gate charge at the gate-source voltage is 1.1 nC.
The dimensions of the SOT-23 package are 3 mm in length, 1.7 mm in width, and 1 mm in height.
This model operates within a temperature range of -55°C to +150°C.
The maximum power dissipation for this model is rated at 960 mW.
It uses an isolated transistor configuration with dual enhancement mode channels (Type P and Type N).
The maximum gate-source voltage rating is ±20 V.
This model supports surface mounting due to its SOT-23 package design.
The channel mode of this power MOSFET is enhancement mode.
The forward voltage for this model is 0.8 V.
The NDC7001C is manufactured in India.
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