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DiodesZetex Small Signal NPN Transistor 600 mA 160 V 3-Pin SOT-23 MMBT5551-7-F

Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1.1mm
Length 3mm
Model MMBT5551-7-F
Width 2.5mm
Mount Type Surface
Series MMBT5551
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 160V
Minimum DC Current Gain hFE 80
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 180V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 300mW
Maximum DC Collector Current Idc 600mA
Transistor Configuration Single
Maximum Transition Frequency ft 300MHz

Key Features

  • Capable of handling maximum DC collector current of 600 mA.
  • Supports a maximum collector-emitter voltage of 160 V for reliable operation.
  • Designed in a surface mount SOT-23 package for compact PCB layouts.
  • Features a transistor polarity of NPN suitable for switching and amplification.
  • Maximum power dissipation is 300 mW, ideal for low power applications.
  • Minimum DC current gain hFE of 80 ensures good amplification performance.
  • Wide operating temperature range from -55°C to 150°C for industrial use.
  • Maximum transition frequency of 300 MHz allowing high frequency signal applications.

Product Description

DiodesZetex MMBT5551-7-F is a small signal NPN transistor designed for electronic and industrial applications requiring reliable performance and compact design. It features a maximum DC collector current rating of 600 mA and can withstand collector-emitter voltages up to 160 V, making it suitable for switching and amplification tasks in circuits.

The device is housed in a 3-Pin SOT-23 surface mount package, allowing efficient PCB space utilization for modern electronics. The transistor supports a wide temperature range from -55°C to 150°C, catering to harsh environmental conditions often encountered in industrial and automotive applications.

With a minimum DC current gain (hFE) of 80 and a maximum transition frequency of 300 MHz, it delivers stable and high-frequency amplification performance. The maximum power dissipation is rated at 300 mW, aligning it with low-power circuit requirements.

The compact physical dimensions (3 mm length, 2.5 mm width, and 1.1 mm height) ensure versatility in integration into various electronic modules. Additionally, the transistor meets the stringent automotive standard AEC-Q101, qualifying it for automotive-grade electronics and enhancing system reliability.

This transistor is ideal for use in industrial electronics, automotive controllers, communication devices, and power management circuits where small signal amplification is required under variable conditions.

Capable of handling maximum DC collector current of 600 mA. Supports a maximum collector-emitter voltage of 160 V for reliable operation. Designed in a surface mount SOT-23 package for compact PCB layouts. Features a transistor polarity of NPN suitable for switching and amplification.

Maximum power dissipation is 300 mW, ideal for low power applications. Minimum DC current gain hFE of 80 ensures good amplification performance. Wide operating temperature range from -55°C to 150°C for industrial use. Maximum transition frequency of 300 MHz allowing high frequency signal applications.

Compact dimensions: length 3 mm, width 2.5 mm, height 1.1 mm. Complies with automotive standard AEC-Q101 ensuring high reliability in automotive environments.

Explore the broad range of Bipolar Transistors and discrete semiconductor components at EnvMart to find solutions tailored for your industrial, automotive, and electronics manufacturing projects.

DiodesZetex Small Signal NPN Transistor 600 mA 160 V 3-Pin SOT-23 MMBT5551-7-F
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Frequently Asked Questions

The maximum DC collector current for this model is 600 mA.

It supports a maximum collector-emitter voltage of 160 V.

This transistor is designed in a surface mount SOT-23 package.

The minimum DC current gain (hFE) is 80, ensuring good amplification performance.

The maximum power dissipation is rated at 300 mW.

It operates within a wide temperature range from -55°C to 150°C.

The maximum transition frequency is 300 MHz, allowing for high-frequency signal applications.

The physical dimensions are 3 mm in length, 2.5 mm in width, and 1.1 mm in height.

It complies with the automotive standard AEC-Q101, ensuring reliability in automotive environments.

This model features an NPN transistor polarity, suitable for switching and amplification tasks.

The maximum emitter-base voltage (VEBO) is rated at 6 V.

It is ideal for use in industrial electronics, automotive controllers, communication devices, and power management circuits.

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