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DiodesZetex Small Signal PNP Transistor BC856BW-7-F, -100 mA, -65 V, 3-Pin SOT-323

Category Bipolar Transistor Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1.1mm
Length 2.2mm
Model BC856BW-7-F
Width 2.2mm
Mount Type Surface
Series BC856BW
Maximum Operating Temperature 150°C
Package Type SOT-323
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -65V
Minimum DC Current Gain hFE 220
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -80V
Automotive Standard AEC-Q200, AEC-Q100, AEC-Q101
Maximum Power Dissipation Pd 200mW
Maximum DC Collector Current Idc -100mA
Transistor Configuration Single
Maximum Transition Frequency ft 200MHz
onsemi FJX992TF PNP Transistor, 100 mA, 120 V, 3-Pin SOT-323Brand onsemi

Key Features

  • This transistor has a maximum power dissipation rating of 200 mW.
  • It operates within a temperature range of -55°C to 150°C.
  • The device offers a minimum DC current gain of 220, providing reliable amplification performance.
  • Designed with a single transistor configuration and surface mount type.
  • It meets automotive standards including AEC-Q200, AEC-Q100, and AEC-Q101 for high reliability.
  • Compact physical dimensions of 2.2 mm length, 2.2 mm width, and 1.1 mm height enable space-saving PCB layouts.
  • Maximum transition frequency is 200 MHz suitable for high frequency applications.
  • The transistor polarity is PNP, supporting specific circuit requirements.

Product Description

DiodesZetex BC856BW-7-F is a small signal PNP transistor designed for low power amplification and switching applications. It features a maximum DC collector current of -100 mA and a maximum collector-emitter voltage of -65 V. Packaged in a compact 3-pin SOT-323 surface mount device, this transistor is ideal for use in modern electronic circuit designs where board space savings are critical.

The transistor offers a minimum DC current gain (hFE) of 220 and a maximum power dissipation of 200 mW, suitable for small signal amplification tasks in various industrial, automotive, and consumer electronics applications. Its operating temperature range from -55°C to 150°C ensures reliable performance in harsh environmental conditions.

Meeting automotive quality standards AEC-Q200, AEC-Q100, and AEC-Q101, the BC856BW-7-F transistor is well suited for automotive electronics and other demanding environments. The maximum transition frequency of 200 MHz allows for effective high-frequency operation, making it versatile for signal processing tasks.

Physically, the device measures 2.2 mm in length and width and 1.1 mm in height, enabling compact circuit layouts on printed circuit boards. The transistor supports single transistor configurations and is optimized for surface mount technology assembly methods.

This product is manufactured in China and is shipped as a new component. It is commonly used in industrial electronics, automotive circuits, consumer electronics, and other semiconductor applications requiring a reliable PNP transistor in a small package.

This transistor has a maximum power dissipation rating of 200 mW. It operates within a temperature range of -55°C to 150°C. The device offers a minimum DC current gain of 220, providing reliable amplification performance.

Designed with a single transistor configuration and surface mount type. It meets automotive standards including AEC-Q200, AEC-Q100, and AEC-Q101 for high reliability. Compact physical dimensions of 2.2 mm length, 2.2 mm width, and 1.1 mm height enable space-saving PCB layouts.

Maximum transition frequency is 200 MHz suitable for high frequency applications. The transistor polarity is PNP, supporting specific circuit requirements. Maximum emitter-base voltage is -5 V, and collector-base voltage is -80 V.

Package type SOT-323 offers standard surface mount compatibility for automated assembly. Explore more semiconductor components and discrete transistors in the Electronics & Electricals category on EnvMart for high quality industrial and automotive applications.

Explore more products in our Bipolar Transistor category.

DiodesZetex Small Signal PNP Transistor BC856BW-7-F, -100 mA, -65 V, 3-Pin SOT-323
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Frequently Asked Questions

The maximum power dissipation rating of this transistor is 200 mW.

It operates within a temperature range of -55°C to 150°C.

The device offers a minimum DC current gain of 220, providing reliable amplification performance.

The transistor has compact dimensions of 2.2 mm in length, 2.2 mm in width, and 1.1 mm in height.

The maximum collector-emitter voltage (Vceo) is -65 V.

The maximum transition frequency is 200 MHz, suitable for high frequency applications.

It meets automotive standards including AEC-Q200, AEC-Q100, and AEC-Q101 for high reliability.

The maximum DC collector current is -100 mA.

This transistor is designed with a single transistor configuration.

The maximum emitter-base voltage (VEBO) is -5 V.

The transistor polarity is PNP, supporting specific circuit requirements.

It is designed for surface mount technology assembly methods, packaged in a SOT-323 format.

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