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DiodesZetex High Voltage PNP Bipolar Transistor DP350T05-7, -500 mA, -350 V, 3-Pin SOT-23 DP350T05-7

Category Bipolar Transistor Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.1mm
Length 3mm
Model DP350T05-7
Width 2.5mm
Mount Type Surface
Series DP350T05
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -350V
Minimum DC Current Gain hFE 15
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -350V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 300mW
Maximum DC Collector Current Idc -500mA
Transistor Configuration Single

Key Features

  • High voltage PNP bipolar transistor with -500 mA collector current.
  • Maximum collector-emitter voltage rating of -350 V.
  • Compact 3-pin SOT-23 surface mount package.
  • Power dissipation capacity of 300 mW for heat management.
  • Operates within -55°C to 150°C temperature range.
  • Minimum DC current gain (hFE) of 15 for stable amplification.
  • Meets automotive standard AEC-Q101 for reliability.
  • Suitable for industrial, automotive, and electronic manufacturing.

Product Description

The DiodesZetex DP350T05-7 bipolar transistor is engineered for high voltage PNP applications where reliable switching and amplification are required. With a maximum DC collector current of -500 mA and collector-emitter voltage of -350 V, this transistor suits industrial, automotive, and electronic device manufacturing environments.

Included in a SOT-23 surface mount package, the DP350T05-7 ensures compactness alongside performance, ideal for high-density circuit boards. The transistor supports a maximum power dissipation of 300 mW, safeguarding against overheating during operation.

This component operates over a broad temperature range from -55°C to 150°C and meets the stringent automotive standard AEC-Q101, ensuring durability and reliability in automotive electronic systems.

Key voltage ratings include maximum collector-base voltage (VCBO) of -350 V and emitter-base voltage (VEBO) of -5 V. Its minimum DC current gain (hFE) rating of 15 facilitates effective signal amplification.

The transistor's dimensions are compact, measuring 3 mm in length, 2.5 mm in width, and 1.1 mm in height, making it suitable for small footprint electronic assemblies requiring surface mount devices.

This device is intended for use in electronics manufacturing, automotive electronics, industrial control systems, and general semiconductor applications. Its 3-pin single transistor configuration simplifies integration into various circuit designs.

Package type SOT-23 supports automated mounting on printed circuit boards.

Choose the DP350T05-7 transistor for dependable, high-voltage PNP transistor performance in industrial semiconductor projects and automotive electronic assemblies. Explore more high-quality Bipolar Transistors in the DiodesZetex range available at EnvMart.

DiodesZetex High Voltage PNP Bipolar Transistor DP350T05-7, -500 mA, -350 V, 3-Pin SOT-23 DP350T05-7
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Frequently Asked Questions

The maximum collector-emitter voltage rating is -350 V.

It has a maximum DC collector current capacity of -500 mA.

The power dissipation capacity is 300 mW.

It operates within a temperature range of -55°C to 150°C.

The minimum DC current gain (hFE) is 15.

The dimensions are 3 mm in length, 2.5 mm in width, and 1.1 mm in height.

It comes in a compact SOT-23 surface mount package.

It meets the automotive standard AEC-Q101 for reliability.

The maximum emitter-base voltage (VEBO) is -5 V.

This model has a single transistor configuration with 3 pins.

It is suitable for industrial, automotive, and electronic manufacturing applications.

It is a high voltage PNP bipolar transistor.

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