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DiodesZetex Small Signal PNP Transistor, 800 mA, 45 V, 3-Pin SOT-23 BCW68HTA

Category Bipolar Transistor Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.1mm
Length 3mm
Model BCW68HTA
Width 1.4mm
Mount Type Surface
Series BCW68H
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -45V
Minimum DC Current Gain hFE 100
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 5V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 330mW
Maximum DC Collector Current Idc -800mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • Supports a maximum power dissipation of 330 mW for efficient operation.
  • Surface mount design suitable for high-density PCB layouts.
  • Minimum DC current gain (hFE) of 100 ensures reliable amplification performance.
  • Wide operating temperature range from -55°C to 150°C for robust use in automotive and industrial applications.
  • Automotive standard AEC-Q101 compliant for enhanced quality and reliability.
  • Compact dimensions with 3 mm length, 1.4 mm width, and 1.1 mm height.
  • Maximum transition frequency of 100 MHz allowing for high-speed switching applications.
  • Designed as a single transistor configuration with PNP polarity.

Product Description

DiodesZetex BCW68HTA is a small signal PNP transistor optimized for switching and amplification in electronic circuits. It supports a maximum collector current of 800 mA and a maximum collector emitter voltage of 45 V while dissipating up to 330 mW of power.

This transistor is housed in a SOT-23 3-pin surface mount package, featuring compact dimensions of 3 mm length, 1.4 mm width, and 1.1 mm height. Its surface mount design facilitates integration into modern printed circuit boards, especially where space conservation is critical.

The BCW68HTA offers a minimum DC current gain of 100 and operates reliably within a broad temperature range from -55°C to 150°C, making it suitable for demanding industrial and automotive environments. It complies with the automotive AEC-Q101 standard, demonstrating its adherence to rigorous quality and reliability benchmarks.

With a maximum transition frequency of 100 MHz, this transistor is suitable for high-frequency switching applications. The device features a single transistor configuration with PNP polarity and allows for emitter base voltages up to 5 V.

Supports maximum DC collector current of 800 mA. Maximum collector emitter voltage rating of 45 V. SOT-23 surface mount package with 3 pins. Efficient power dissipation of 330 mW. Wide operating temperature range from -55°C to 150°C.

Automotive standard AEC-Q101 compliant. High transition frequency of 100 MHz. Minimum current gain (hFE) of 100.

Ideal for industrial, automotive, electronic manufacturing, and high-density PCB assembly applications. This transistor enables reliable performance in compact spaces, ensuring efficient circuit operation and durability.

Explore more quality semiconductor products in the Bipolar Transistors category at EnvMart for your electronic design and production needs.

DiodesZetex Small Signal PNP Transistor, 800 mA, 45 V, 3-Pin SOT-23 BCW68HTA
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Frequently Asked Questions

The maximum collector current for this transistor is 800 mA.

The maximum collector-emitter voltage rating is 45 V.

It supports a maximum power dissipation of 330 mW.

The transistor operates within a wide temperature range from -55°C to 150°C.

The minimum DC current gain (hFE) is 100.

This transistor is housed in a SOT-23 surface mount package with 3 pins.

The maximum transition frequency is 100 MHz, suitable for high-speed switching applications.

It complies with the automotive standard AEC-Q101, ensuring enhanced quality and reliability.

The maximum emitter-base voltage (VEBO) is 5 V.

The dimensions are 3 mm in length, 1.4 mm in width, and 1.1 mm in height.

Yes, its surface mount design makes it suitable for high-density PCB layouts.

It is designed as a single transistor configuration with PNP polarity.

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