Nexperia P-Channel MOSFET 130 mA, 50 V Enhancement 3-Pin SOT-23 BSS84,215

The Nexperia BSS84,215 is a P-Channel MOSFET transistor designed for reliable switching in electronics circuits. It supports a maximum continuous drain current of 130 mA and withstands drain-source voltages up to 50 V, making it ideal for low power applications.

This MOSFET uses enhancement mode channel operation, enhancing efficient control with a low typical gate charge of 0.26 nC, which benefits switching speed and power consumption. The component is housed in a 3-pin SOT-23 surface mount package with compact physical dimensions, enabling integration into space-sensitive electronic assemblies.

The maximum drain-source resistance of 10 ohms ensures minimized power losses during operation. With a power dissipation rating of 250 mW, it suits applications with moderate power requirements. Its temperature range spans from -65°C to 150°C, qualifying it for use in diverse industrial, automotive, and manufacturing environments.

This device complies with the automotive industry standard AEC-Q101, validating its suitability for automotive electronics. The maximum allowable gate-source voltage is ±20 V, offering robust control margins.

The device is surface mountable in a standard SOT-23 package. Operates efficiently within a wide temperature range. Low gate charge minimizes switching losses and improves efficiency. Suitable for discrete semiconductor circuits and low current switching applications.

Conforms to automotive quality standards for enhanced reliability.

Typical uses include electronic switching in automotive circuits, industrial controllers, and low power device interfaces. Its compact size and robust ratings make it a versatile component in semiconductor discrete device applications.

Explore more Nexperia semiconductor components within EnvMart's Electronics & Electricals category for advanced industrial solutions.