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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | BSC027N06LS5ATMA1 |
| Mount Type | Surface |
| Series | BSC0 |
| Maximum Operating Temperature | +150°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 381A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 0.7mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Infineon BSC027N06LS5ATMA1 is a high-current N-channel power MOSFET designed for surface-mount applications requiring efficient switching and thermal endurance. It supports a maximum continuous drain current of 381 A and a maximum drain-source voltage of 60 V. Featuring a low on-resistance of 0.7 mΩ, this MOSFET reduces conduction losses in demanding applications.
The device allows a maximum power dissipation of 81 W, ensuring significant thermal headroom for robust operation. It has a typical gate charge of 80 nC, facilitating faster switching with moderate driver effort. Its intrinsic diode exhibits a forward voltage of 1.2 V, which minimizes peak reverse recovery stress during switching events.
This MOSFET operates reliably within a wide ambient temperature range from -55°C up to +150°C, supporting industrial, motor control, and power management applications. Its compact TDSON 8-pin package is suitable for surface mount on compact boards with controlled gate drive characteristics.
Common applications include high-current motor driver stages, synchronous rectification in power converters, battery management systems, DC-DC power modules, and industrial drives that require reliable switching and low conduction losses.
Designers should provide adequate copper area and thermal vias on the board to effectively dissipate heat for sustained high-current operation. The gate drive voltage can be up to 20 V, but design should consider the typical gate charge when sizing the gate driver to achieve desired switching speeds.
Designed for high-current surface-mount applications with efficient switching. Supports a maximum power dissipation of 81 W for thermal endurance. Typical gate charge of 80 nC enables faster switching speeds. Forward diode voltage of 1.2 V minimizes recovery stress during commutation.
Operates safely from -55°C to +150°C temperature range. Package type is TDSON with 8 pins for compact board layouts. Suitable for motor driver stages and synchronous rectification in power converters. Compliance with RoHS standards ensuring environmental safety.
This product is ideal for industrial, automotive, and power conversion applications requiring high efficiency and robust thermal performance. Explore our Electronics & Electricals Semiconductors category for a wide range of MOSFETs and power devices.
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