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Infineon N-Channel MOSFET 60 V, 381 A, 0.7mΩ Rds(on), 81 W Power Dissipation, TDSON 8-Pin BSC027N06LS5ATMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model BSC027N06LS5ATMA1
Mount Type Surface
Series BSC0
Maximum Operating Temperature +150°C
Package Type TDSON
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 8
Channel Type N
Maximum Continuous Drain Current Id 381A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 0.7mΩ
Channel Mode N
Maximum Power Dissipation Pd 81W
Typical Gate Charge Qg @ Vgs 80nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.2V

Key Features

  • Designed for high-current surface-mount applications with efficient switching.
  • Supports a maximum power dissipation of 81 W for thermal endurance.
  • Typical gate charge of 80 nC enables faster switching speeds.
  • Forward diode voltage of 1.2 V minimizes recovery stress during commutation.
  • Operates safely from -55°C to +150°C temperature range.
  • Package type is TDSON with 8 pins for compact board layouts.
  • Suitable for motor driver stages and synchronous rectification in power converters.
  • Compliance with RoHS standards ensuring environmental safety.

Product Description

Infineon BSC027N06LS5ATMA1 is a high-current N-channel power MOSFET designed for surface-mount applications requiring efficient switching and thermal endurance. It supports a maximum continuous drain current of 381 A and a maximum drain-source voltage of 60 V. Featuring a low on-resistance of 0.7 mΩ, this MOSFET reduces conduction losses in demanding applications.

The device allows a maximum power dissipation of 81 W, ensuring significant thermal headroom for robust operation. It has a typical gate charge of 80 nC, facilitating faster switching with moderate driver effort. Its intrinsic diode exhibits a forward voltage of 1.2 V, which minimizes peak reverse recovery stress during switching events.

This MOSFET operates reliably within a wide ambient temperature range from -55°C up to +150°C, supporting industrial, motor control, and power management applications. Its compact TDSON 8-pin package is suitable for surface mount on compact boards with controlled gate drive characteristics.

Common applications include high-current motor driver stages, synchronous rectification in power converters, battery management systems, DC-DC power modules, and industrial drives that require reliable switching and low conduction losses.

Designers should provide adequate copper area and thermal vias on the board to effectively dissipate heat for sustained high-current operation. The gate drive voltage can be up to 20 V, but design should consider the typical gate charge when sizing the gate driver to achieve desired switching speeds.

Designed for high-current surface-mount applications with efficient switching. Supports a maximum power dissipation of 81 W for thermal endurance. Typical gate charge of 80 nC enables faster switching speeds. Forward diode voltage of 1.2 V minimizes recovery stress during commutation.

Operates safely from -55°C to +150°C temperature range. Package type is TDSON with 8 pins for compact board layouts. Suitable for motor driver stages and synchronous rectification in power converters. Compliance with RoHS standards ensuring environmental safety.

This product is ideal for industrial, automotive, and power conversion applications requiring high efficiency and robust thermal performance. Explore our Electronics & Electricals Semiconductors category for a wide range of MOSFETs and power devices.

Infineon N-Channel MOSFET 60 V, 381 A, 0.7mΩ Rds(on), 81 W Power Dissipation, TDSON 8-Pin BSC027N06LS5ATMA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 381 A.

This MOSFET supports a maximum drain-source voltage of 60 V.

The on-resistance (Rds(on)) of this model is 0.7 mΩ.

It supports a maximum power dissipation of 81 W.

The typical gate charge for this MOSFET is 80 nC.

The forward voltage of the intrinsic diode is 1.2 V.

This model operates safely within a temperature range of -55°C to +150°C.

It comes in a TDSON package type with 8 pins.

Common applications include high-current motor driver stages, synchronous rectification in power converters, and battery management systems.

The maximum gate-source voltage for this MOSFET is 20 V.

Yes, it complies with RoHS standards, ensuring environmental safety.

This MOSFET is designed for surface mounting.

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