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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | BSZ011NE2LS5IATMA1 |
| Mount Type | Surface |
| Series | BSZ |
| Maximum Operating Temperature | 175°C |
| Package Type | TSDSON-8 FL |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 212A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.7mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Infineon BSZ011NE2LS5IATMA1 is a high-performance N-Channel MOSFET designed specifically for power electronics applications, especially high-efficiency buck converters. With a maximum continuous drain current of 212 A and a maximum drain source voltage of 40 V, this device provides robust performance under demanding operating conditions. The MOSFET comes in an 8-pin TSDSON-8 FL package that supports surface mounting, facilitating compact PCB design.
This MOSFET features a very low on-resistance (Rds) of 0.7 mΩ, contributing to minimal power loss and improved thermal management. The device also integrates a monolithic Schottky-like diode, enhancing switching speed and efficiency. It has a maximum power dissipation of 81 W, allowing reliable performance in power-dense environments.
The operating temperature range from -55°C to 175°C allows use in harsh industrial and automotive environments, though it is not certified for automotive standards. The device complies with RoHS and is halogen-free according to IEC61249-2-21, making it environmentally friendly and suitable for modern manufacturing requirements.
Key electrical features include a maximum gate source voltage of 20 V, a forward voltage of 1 V, and a typical gate charge of 80 nC at the gate voltage, ensuring efficient gate drive and switching characteristics. These properties make it suitable for industrial electronics, power management, and high-performance computing applications.
Due to its surface mount design and small footprint, the BSZ011NE2LS5IATMA1 enables space-saving layouts on printed circuit boards. This MOSFET is ideal for use in electronic components, power & connectors, semiconductors, and discrete semiconductor categories, especially in applications requiring efficient power control and conversion.
Optimized for efficient power conversion in buck regulators. Low on-resistance reduces energy loss and heat generation. High current rating supports demanding load conditions. Wide operating temperature range suits industrial environments.
RoHS compliant and environmentally safe construction. Explore more Infineon semiconductor products and power MOSFETs on EnvMart to find optimal solutions for your electronic design needs.
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