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Infineon BSZ N-Channel MOSFET, 212 A, 40 V, 8-Pin TSDSON-8 FL BSZ011NE2LS5IATMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model BSZ011NE2LS5IATMA1
Mount Type Surface
Series BSZ
Maximum Operating Temperature 175°C
Package Type TSDSON-8 FL
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 8
Channel Type N
Maximum Continuous Drain Current Id 212A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 0.7mΩ
Channel Mode N
Maximum Power Dissipation Pd 81W
Typical Gate Charge Qg @ Vgs 80nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1V

Key Features

  • Optimized for high performance buck converters.
  • Features very low on-resistance of 0.7 mΩ for efficiency.
  • Maximum power dissipation rating of 81 W for robust operation.
  • Supports operating temperatures from -55°C to 175°C.
  • Includes a monolithic integrated Schottky-like diode for fast switching.
  • RoHS compliant and halogen-free according to IEC61249-2-21 standards.
  • Maximum gate charge of 80 nC at Vgs for fast gate drive response.
  • Maximum gate source voltage of 20 V to ensure device reliability.

Product Description

Infineon BSZ011NE2LS5IATMA1 is a high-performance N-Channel MOSFET designed specifically for power electronics applications, especially high-efficiency buck converters. With a maximum continuous drain current of 212 A and a maximum drain source voltage of 40 V, this device provides robust performance under demanding operating conditions. The MOSFET comes in an 8-pin TSDSON-8 FL package that supports surface mounting, facilitating compact PCB design.

This MOSFET features a very low on-resistance (Rds) of 0.7 mΩ, contributing to minimal power loss and improved thermal management. The device also integrates a monolithic Schottky-like diode, enhancing switching speed and efficiency. It has a maximum power dissipation of 81 W, allowing reliable performance in power-dense environments.

The operating temperature range from -55°C to 175°C allows use in harsh industrial and automotive environments, though it is not certified for automotive standards. The device complies with RoHS and is halogen-free according to IEC61249-2-21, making it environmentally friendly and suitable for modern manufacturing requirements.

Key electrical features include a maximum gate source voltage of 20 V, a forward voltage of 1 V, and a typical gate charge of 80 nC at the gate voltage, ensuring efficient gate drive and switching characteristics. These properties make it suitable for industrial electronics, power management, and high-performance computing applications.

Due to its surface mount design and small footprint, the BSZ011NE2LS5IATMA1 enables space-saving layouts on printed circuit boards. This MOSFET is ideal for use in electronic components, power & connectors, semiconductors, and discrete semiconductor categories, especially in applications requiring efficient power control and conversion.

Optimized for efficient power conversion in buck regulators. Low on-resistance reduces energy loss and heat generation. High current rating supports demanding load conditions. Wide operating temperature range suits industrial environments.

RoHS compliant and environmentally safe construction. Explore more Infineon semiconductor products and power MOSFETs on EnvMart to find optimal solutions for your electronic design needs.

Infineon BSZ N-Channel MOSFET, 212 A, 40 V, 8-Pin TSDSON-8 FL BSZ011NE2LS5IATMA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 212 A.

The maximum drain-source voltage is 40 V.

It features a very low on-resistance of 0.7 mΩ.

The maximum power dissipation rating is 81 W.

The operating temperature range is from -55°C to 175°C.

It comes in an 8-pin TSDSON-8 FL package that supports surface mounting.

The maximum gate source voltage is 20 V.

The typical gate charge at Vgs is 80 nC.

Yes, it is RoHS compliant and halogen-free according to IEC61249-2-21 standards.

The forward voltage of the integrated diode is 1 V.

It is optimized for high-performance buck converters and efficient power conversion in power electronics applications.

The country of origin is India.

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