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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | BSC018NE2LSIATMA1 |
| Mount Type | Surface |
| Series | BSC0 |
| Maximum Operating Temperature | 175°C |
| Package Type | SuperSO8 5 x 6 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 381A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 2.9mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Infineon BSC018NE2LSIATMA1 N-Channel MOSFET is a high-current, low-voltage semiconductor device designed primarily for power switching applications. Rated for a maximum continuous drain current of 381 amperes and a drain-source voltage of 40 V, it is housed in a compact 8-pin SuperSO8 surface mount package measuring 5 x 6 mm. This MOSFET features an ultra-low gate and output charge combined with the lowest on-state resistance for its package size, optimizing efficiency in demanding power management scenarios.
The device incorporates a monolithic integrated Schottky-like diode to minimize switching losses and improve overall device efficiency. It operates over a wide temperature range from -55°C up to 175°C and complies with RoHS and halogen-free standards, making it suitable for environmentally conscious applications.
This MOSFET is 100% avalanche tested, guaranteeing robust performance under transient conditions. The low typical gate charge of 80 nC facilitates fast switching speeds, making it ideal for high-frequency buck converter topologies and voltage regulator modules in servers, datacom infrastructure, and telecom equipment.
The device’s surface mount package and 8-pin configuration support easy integration into high-density PCB layouts, enabling compact and reliable power management circuits. Maximum continuous drain current of 381A ensures robust power handling capability.
Low on-state resistance of 2.9 mΩ at VGS = 4.5V reduces conduction losses. Drain-source voltage rating of 40V suits low-voltage power applications. Wide operating temperature range from -55°C to 175°C for harsh environments.
Compact 8-pin SuperSO8 5 x 6 mm package suitable for surface mount assembly. Integrated Schottky-like diode for decreased switching losses. Fully avalanche tested for ruggedness in demanding applications. RoHS and halogen-free compliant for environmental safety.
Optimized for use in voltage regulators, servers, and telecom systems.
This Infineon MOSFET is a reliable semiconductor choice for electronic equipment requiring efficient power conversion and management, including industrial, telecom, datacom, and computing systems. EnvMart offers this advanced MOSFET for professionals enhancing system performance with trusted components.
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