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Infineon N-Channel MOSFET 381A 40V 8-Pin SuperSO8 Surface Mount BSC018NE2LSIATMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model BSC018NE2LSIATMA1
Mount Type Surface
Series BSC0
Maximum Operating Temperature 175°C
Package Type SuperSO8 5 x 6
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 8
Channel Type N
Maximum Continuous Drain Current Id 381A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 2.9mΩ
Channel Mode N
Maximum Power Dissipation Pd 81W
Typical Gate Charge Qg @ Vgs 80nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1V

Key Features

  • Maximum continuous drain current of 381 amperes ensuring high power handling capacity.
  • Low on-state resistance of 2.9 milliohms for efficient conduction.
  • Maximum drain-source voltage rated at 40 volts for reliable operation.
  • Typical gate charge is 80 nanocoulombs, enabling fast switching.
  • Operates safely between -55°C and 175°C temperature range.
  • Surface mount SuperSO8 5 x 6 mm package with 8 pins for compact circuit design.
  • Equipped with monolithic integrated Schottky-like diode to reduce losses.
  • RoHS compliant and halogen-free according to IEC standards.

Product Description

Infineon BSC018NE2LSIATMA1 N-Channel MOSFET is a high-current, low-voltage semiconductor device designed primarily for power switching applications. Rated for a maximum continuous drain current of 381 amperes and a drain-source voltage of 40 V, it is housed in a compact 8-pin SuperSO8 surface mount package measuring 5 x 6 mm. This MOSFET features an ultra-low gate and output charge combined with the lowest on-state resistance for its package size, optimizing efficiency in demanding power management scenarios.

The device incorporates a monolithic integrated Schottky-like diode to minimize switching losses and improve overall device efficiency. It operates over a wide temperature range from -55°C up to 175°C and complies with RoHS and halogen-free standards, making it suitable for environmentally conscious applications.

This MOSFET is 100% avalanche tested, guaranteeing robust performance under transient conditions. The low typical gate charge of 80 nC facilitates fast switching speeds, making it ideal for high-frequency buck converter topologies and voltage regulator modules in servers, datacom infrastructure, and telecom equipment.

The device’s surface mount package and 8-pin configuration support easy integration into high-density PCB layouts, enabling compact and reliable power management circuits. Maximum continuous drain current of 381A ensures robust power handling capability.

Low on-state resistance of 2.9 mΩ at VGS = 4.5V reduces conduction losses. Drain-source voltage rating of 40V suits low-voltage power applications. Wide operating temperature range from -55°C to 175°C for harsh environments.

Compact 8-pin SuperSO8 5 x 6 mm package suitable for surface mount assembly. Integrated Schottky-like diode for decreased switching losses. Fully avalanche tested for ruggedness in demanding applications. RoHS and halogen-free compliant for environmental safety.

Optimized for use in voltage regulators, servers, and telecom systems.

This Infineon MOSFET is a reliable semiconductor choice for electronic equipment requiring efficient power conversion and management, including industrial, telecom, datacom, and computing systems. EnvMart offers this advanced MOSFET for professionals enhancing system performance with trusted components.

Infineon N-Channel MOSFET 381A 40V 8-Pin SuperSO8 Surface Mount BSC018NE2LSIATMA1
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Frequently Asked Questions

The maximum continuous drain current is 381 amperes, ensuring high power handling capacity.

This model has a maximum drain-source voltage rating of 40 volts, suitable for low-voltage power applications.

It features a low on-state resistance of 2.9 milliohms, which helps reduce conduction losses.

The typical gate charge is 80 nanocoulombs, enabling fast switching capabilities.

It operates safely between -55°C and 175°C, making it suitable for harsh environments.

This model is housed in a compact SuperSO8 surface mount package measuring 5 x 6 mm with 8 pins.

Yes, it is equipped with a monolithic integrated Schottky-like diode to minimize switching losses.

This MOSFET is RoHS compliant and halogen-free according to IEC standards, ensuring environmental safety.

The maximum power dissipation is rated at 81 watts, allowing for effective thermal management in applications.

The maximum gate-source voltage for this MOSFET is 20 volts, providing flexibility in various circuit designs.

It is optimized for use in voltage regulators, servers, and telecom systems, enhancing power management efficiency.

This device features an N-channel configuration, which is commonly used for power switching applications.

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