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Infineon N-Channel MOSFET 253 A 30 V 8-Pin PQFN Surface Mount IQE050N08NM5ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Length | 3.3mm |
| Model | IQE050N08NM5ATMA1 |
| Mount Type | Surface |
| Series | IQE |
| Maximum Operating Temperature | 150°C |
| Package Type | PQFN |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 253A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 0.85mΩ |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 16V |
| Forward Voltage Vf | 730mV |
Key Features
- Maximum continuous drain current rating of 253 A ensures high current capability.
- Maximum drain-source voltage of 30 V supports low-voltage load switching.
- Low drain-source resistance of 0.85 milliohm reduces conduction losses.
- Forward voltage drop of 730 mV improves efficiency.
- Typical gate charge of 80 nC at Vgs supports fast switching.
- Maximum power dissipation of 81 W allows robust thermal handling.
- Operating temperature range from -55°C to 150°C suits harsh environments.
- AEC-Q101 automotive standard certified for reliability in automotive systems.
Product Description
The Infineon IQE050N08NM5ATMA1 N-Channel MOSFET is designed for high performance and efficiency in power management and switching applications. Featuring a low Rds(on) resistance of 0.85 milliohm and a maximum continuous drain current of 253 A, it handles large currents with minimal losses. It supports a maximum drain-source voltage of 30 V, suitable for low voltage DC-DC converters and motor control circuits.
This MOSFET is packaged in an 8-pin PQFN surface mount format with a compact 3.3 mm length, enabling improved PCB density and thermal management. The device offers a typical gate charge of 80 nC at 8 V gate drive voltage, facilitating rapid switching for efficiency in high frequency applications.
With a maximum power dissipation of 81 W and operating temperature range from -55°C to 150°C, the IQE050N08NM5ATMA1 ensures reliable operation even in demanding industrial and automotive environments. It conforms to the AEC-Q101 automotive standard, verifying suitability for automotive electronics.
High current capability with 253 A continuous drain current. Low on-resistance optimizes conduction losses. Compact PQFN package enhances power density and heat dissipation. Wide operating temperature for harsh environment use.
Automotive standard compliant for reliability and safety.
Commonly applied in industrial power supplies, automotive motor drivers, and DC-DC converters, this MOSFET is a robust choice for engineers requiring efficient power switching solutions. Its low gate charge and resistance enhance switching performance, reducing overall system power consumption and thermal stress.
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Frequently Asked Questions
The maximum continuous drain current rating of this model is 253 A, allowing it to handle high current applications effectively.
It supports a maximum drain-source voltage of 30 V, making it suitable for low-voltage load switching applications.
The drain-source resistance is low at 0.85 milliohm, which helps to reduce conduction losses during operation.
The typical gate charge at a gate-source voltage of 8 V is 80 nC, which supports fast switching capabilities.
It has a maximum power dissipation rating of 81 W, allowing for robust thermal handling in various applications.
The operating temperature range is from -55°C to 150°C, making it suitable for use in harsh environments.
This model is packaged in an 8-pin PQFN surface mount format, which enhances PCB density and thermal management.
It conforms to the AEC-Q101 automotive standard, ensuring reliability for automotive applications.
The forward voltage drop is 730 mV, which improves overall efficiency in power management applications.
The length of this MOSFET is 3.3 mm, contributing to its compact design for improved integration on PCBs.
This MOSFET is commonly applied in industrial power supplies, automotive motor drivers, and DC-DC converters.
The maximum gate-source voltage is 16 V, which is important for ensuring proper operation within specified limits.
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