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Infineon CoolMOS N-Channel MOSFET, 25 A, 700 V, 3-Pin TO-263 Package IPB65R090CFD7ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPB65R090CFD7ATMA1 |
| Mount Type | Surface |
| Series | CoolMOS |
| Package Type | TO-263 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 25A |
| Maximum Drain Source Voltage Vds | 700V |
| Maximum Drain Source Resistance Rds | 90mΩ |
| Channel Mode | P |
Key Features
- Features a 3-pin TO-263 surface mount package for easy PCB integration.
- Utilizes super junction CoolMOS technology for improved efficiency and reduced losses.
- Maximum continuous drain current of 25 amperes supports high power requirements.
- Maximum drain-source voltage of 700 volts ensures robustness in power circuits.
- Low maximum drain-source resistance of 90 milliohms enhances conduction efficiency.
- Includes an integrated fast body diode for hard-commutation ruggedness.
- Channel type is N with P-channel mode for optimal switching performance.
- Suitable for industrial sectors including server, telecom, solar, and electric vehicle charging stations.
Product Description
Infineon IPB65R090CFD7ATMA1 CoolMOS N-Channel MOSFET is a high-performance semiconductor device designed for demanding industrial power applications. Featuring a 25 A maximum continuous drain current and 700 V drain-source voltage, it is ideally suited to server, telecom, solar energy, and electric vehicle charging applications where efficiency and reliability are crucial.
This MOSFET comes in a compact 3-pin TO-263 surface mount package that facilitates easy PCB mounting and supports automated assembly processes. The device incorporates Infineon's advanced CoolMOS super junction technology, enhancing efficiency by reducing conduction and switching losses.
Its 90 milliohm maximum drain-source resistance allows for optimized conduction, minimizing power dissipation during operation. The integrated fast body diode ensures excellent ruggedness under hard-commutation conditions, providing extra design safety margins especially in circuits with increased bus voltages.
The N-channel with P-channel mode MOSFET offers superior switching performance, making it suitable for implementation in resonant high power topologies, improving power density and light-load efficiency in industrial switched-mode power supplies (SMPS).
Industries such as industrial manufacturing, water treatment, commercial power supplies, and advanced renewable energy systems benefit from this device's high reliability and effectiveness.
3-pin TO-263 surface mount package for efficient assembly. 25 A maximum continuous drain current supporting high loads. 700 V maximum drain-source voltage for robust power handling. Low 90 mΩ drain-source resistance to limit conduction losses.
Integrated fast body diode enhances device ruggedness. It expands options for engineers seeking to optimize industrial power electronics design with a reliable and efficient MOSFET solution. Explore other Infineon power semiconductors and related components at EnvMart for your next industrial or commercial project.
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Frequently Asked Questions
The maximum continuous drain current for the Infineon CoolMOS N-Channel MOSFET is 25 amperes.
This model has a maximum drain-source voltage rating of 700 volts, making it suitable for robust power handling applications.
It comes in a 3-pin TO-263 surface mount package, which facilitates easy PCB integration.
The maximum drain-source resistance is 90 milliohms, which enhances conduction efficiency.
This model features an N-channel configuration with P-channel mode for optimal switching performance.
It is suitable for applications in server, telecom, solar energy, and electric vehicle charging stations.
Yes, it includes an integrated fast body diode that enhances ruggedness under hard-commutation conditions.
It utilizes Infineon's advanced CoolMOS super junction technology to reduce conduction and switching losses.
This model is designed for surface mounting, which supports automated assembly processes.
Industries such as industrial manufacturing, water treatment, commercial power supplies, and renewable energy systems can benefit from its high reliability and effectiveness.
The low 90 milliohm drain-source resistance minimizes power dissipation during operation, optimizing conduction efficiency.
The country of origin for this product is India.
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