$4.97
$4.82
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Infineon IPT N-Channel MOSFET 454 A 60 V 8-Pin HSOF-8 IPT008N06NM5LFATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.4mm |
| Length | 10.1mm |
| Model | IPT008N06NM5LFATMA1 |
| Width | 10.58mm |
| Mount Type | Surface |
| Series | IPT |
| Maximum Operating Temperature | 150°C |
| Package Type | HSOF-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 454A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 0.8mΩ |
| Maximum Power Dissipation Pd | 278W |
| Typical Gate Charge Qg @ Vgs | 185nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- Supports a maximum continuous drain current of 454 A for heavy current loads.
- 60 V maximum drain-source voltage suitable for high-voltage switching.
- Low maximum drain-source resistance of 0.8 milliohm to reduce conduction losses.
- High maximum power dissipation of 278 W for sustained operation under load.
- Typical gate charge of 185 nC enables precise gate control and switching.
- Wide operating temperature range from -55°C to 150°C for robust thermal endurance.
- Surface mount HSOF-8 package with 8 pins enables compact and efficient PCB layout.
- Gate-source voltage tolerance up to ±20 V for flexible gate driver design.
Product Description
Infineon IPT008N06NM5LFATMA1 is a high-current N-Channel MOSFET tailored for demanding surface-mounted power electronics applications. It delivers a continuous drain current rating of 454 A and a maximum drain-source voltage of 60 V, making it suitable for applications requiring significant current handling and efficient power switching.
This device features a low on-resistance of 0.8 milliohms, which minimizes conduction losses and improves overall system efficiency. With a high maximum power dissipation of 278 W, it supports sustained high-power operation while maintaining reliable thermal performance within its operating temperature range between -55°C and 150°C.
The MOSFET comes in an HSOF-8 surface mount package with 8 pins, allowing for compact PCB design and reduced inductance in power paths. The typical gate charge of 185 nC facilitates controlled switching speeds, while the gate-source voltage tolerance up to ±20 V offers broad flexibility for gate driver circuit designs.
This MOSFET is ideal for high-current motor driver stages, DC-DC converter output switches, power distribution in server power supplies, battery management modules handling large currents, and industrial inverter switching stages. Its robust electrical and thermal specifications ensure dependable performance in industrial, commercial, and automotive environments.
Supports maximum continuous drain current of 454 A for heavy current loads. Maximum drain-source voltage of 60 V provides high-voltage switching capability. Low maximum drain-source resistance of 0.8 mΩ reduces conduction loss.
High power dissipation capability of 278 W supports sustained high power operation. Typical gate charge of 185 nC allows precise switching control. Operates from -55°C to 150°C for wide temperature range. Compact HSOF-8 surface mount package with 8 pins.
Gate-source voltage rating ±20 V enhances gate driver margin.
This product belongs to Infineon's IPT series MOSFETs and is extensively used across industrial, laboratory, manufacturing, and power management applications. The HSOF-8 package enables easy integration into surface-mounted circuit boards where size and efficiency are critical.
Explore more products in the MOSFET category at EnvMart for diverse semiconductor solutions.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 454 A, making it suitable for heavy current loads.
It has a maximum drain-source voltage of 60 V, which allows for high-voltage switching applications.
The maximum drain-source resistance is 0.8 milliohm, which helps reduce conduction losses.
This model can dissipate a maximum power of 278 W, supporting sustained high-power operation.
The typical gate charge is 185 nC, facilitating controlled switching speeds.
It operates within a temperature range of -55°C to 150°C, ensuring robust thermal endurance.
The device comes in an HSOF-8 surface mount package with 8 pins, enabling compact PCB layouts.
It has a gate-source voltage tolerance of up to ±20 V, providing flexibility for gate driver designs.
The dimensions are 10.1 mm in length, 10.58 mm in width, and 2.4 mm in height.
This model is ideal for high-current motor driver stages, DC-DC converter output switches, and battery management modules.
It is an N-channel MOSFET, which is commonly used in power electronics for efficient switching.
The country of origin for this MOSFET is India.
Related Products
$23.16
$20.22
-12.7%
Other Products from this brand
$19.84
$19.24
-3%
New
Recently Viewed Products
$4.97
$4.82
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent