$1.21
$1.17
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Infineon N-Channel MOSFET 75 A 100 V 8-Pin TSDSON ISZ080N10NM6ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 3.4mm |
| Length | 3.4mm |
| Model | ISZ080N10NM6ATMA1 |
| Width | 1.1mm |
| Mount Type | Surface |
| Series | ISZ080N10 |
| Maximum Operating Temperature | 175°C |
| Package Type | TSDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 75A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 8.04mΩ |
| Maximum Power Dissipation Pd | 100W |
| Typical Gate Charge Qg @ Vgs | 24nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- Supports a maximum continuous drain current of 75 A.
- Maximum drain source voltage of 100 V ensures robust performance.
- Offers a low maximum drain source resistance of 8.04 milliohms for efficient conduction.
- Typical gate charge value of 24 nC allows fast switching.
- Maximum power dissipation rating of 100 W supports high power applications.
- Temperature operating range from -55°C to 175°C for reliability in harsh environments.
- Compact physical dimensions of 3.4 mm length, 1.1 mm width, and 3.4 mm height in TSDSON package.
- Ideal for telecom, server power supplies, solar, power tools, and drone applications.
Product Description
The Infineon ISZ080N10NM6ATMA1 is a high-performance N-Channel MOSFET designed specifically for industrial applications requiring high switching frequencies. Featuring a maximum continuous drain current of 75 A and a maximum drain source voltage of 100 V, this MOSFET operates efficiently within demanding electrical environments.
Its 8-pin TSDSON surface mount package delivers compact dimensions (3.4 mm × 1.1 mm × 3.4 mm) suitable for space-constrained circuit boards, making it ideal for telecom equipment, server power supplies, solar energy systems, power tools, and drones.
Key performance highlights include a low maximum drain source resistance of 8.04 mΩ, which reduces conduction losses, and a typical gate charge of 24 nC enabling rapid switching. The device supports a maximum power dissipation of 100 W and operates reliably across a wide temperature range from -55°C to 175°C.
This MOSFET incorporates Infineon’s thin wafer technology, delivering superior avalanche energy rating and efficient reverse recovery characteristics for softer switching. It is RoHS compliant and environmentally friendly, ensuring it meets modern safety and environmental standards.
Supports maximum continuous drain current of 75 A for demanding loads. Rated for maximum drain source voltage of 100 V. Low drain source resistance of 8.04 milliohms reduces power loss. Typical gate charge of 24 nC for fast switching capabilities.
High maximum power dissipation of 100 W supports industrial use. Wide operating temperature range from -55 °C to 175 °C ensures durability. Compact 8-Pin TSDSON surface mount package with precise dimensions. Suitable for telecom, server power, solar, and drone applications.
Advanced thin wafer technology delivers high avalanche energy rating. Compliant with RoHS for environmentally safe manufacturing.
Choose the Infineon ISZ080N10NM6ATMA1 MOSFET for reliable and efficient power switching in your industrial, laboratory, or commercial electronics projects. Explore more semiconductor components and MOSFETs at EnvMart.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 75 A, making it suitable for demanding loads.
This MOSFET has a maximum drain source voltage rating of 100 V, ensuring robust performance in various applications.
It features a low maximum drain source resistance of 8.04 milliohms, which helps reduce conduction losses during operation.
The typical gate charge value is 24 nC, allowing for fast switching capabilities in high-performance applications.
The maximum power dissipation rating for this unit is 100 W, supporting its use in high power applications.
It operates reliably across a wide temperature range from -55°C to 175°C, making it suitable for harsh environments.
The compact dimensions of the TSDSON package are 3.4 mm in length, 1.1 mm in width, and 3.4 mm in height.
This model uses surface mounting, which is ideal for space-constrained circuit boards.
It is suitable for applications in telecom, server power supplies, solar energy systems, power tools, and drones.
The maximum gate source voltage for this MOSFET is 20 V, allowing for compatibility with various gate driving circuits.
The forward voltage rating is 1 V, which is relevant for understanding its conduction characteristics.
Yes, this model is RoHS compliant, ensuring it meets modern safety and environmental standards.
Related Products
$23.16
$20.22
-12.7%
Other Products from this brand
$19.84
$19.24
-3%
New
Recently Viewed Products
$1.21
$1.17
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent