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Infineon Industrial Power N-Channel MOSFET 31 A 100 V 8-Pin TSDSON ISZ230N10NM6ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 3.4mm |
| Length | 3.4mm |
| Model | ISZ230N10NM6ATMA1 |
| Width | 1.1mm |
| Mount Type | Surface |
| Series | ISZ230N10 |
| Maximum Operating Temperature | 175°C |
| Package Type | TSDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 31A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 8.04mΩ |
| Maximum Power Dissipation Pd | 100W |
| Typical Gate Charge Qg @ Vgs | 24nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- Optimized for industrial power applications requiring high efficiency.
- Encapsulated in an 8-pin TSDSON package for surface mount mounting.
- Maximum power dissipation is 100 W for reliable thermal management.
- Low gate charge of 24 nC ensures fast switching performance.
- Compact dimensions of 3.4 mm length, 3.4 mm height, and 1.1 mm width.
- Operates reliably from -55°C to 175°C for demanding environments.
- Low conduction resistance of 8.04 mΩ reduces losses and improves efficiency.
- Designed for telecom, server power supplies, solar, power tools, and drone applications.
Product Description
The Infineon ISZ230N10NM6ATMA1 is an advanced industrial power N-Channel MOSFET optimized for high switching frequency applications. Rated for a maximum continuous drain current of 31 A and maximum drain-source voltage of 100 V, this device supports demanding applications such as telecom power supplies, server power management, solar inverters, power tools, and drones.
Encased in a compact 8-pin TSDSON surface-mount package with dimensions of 3.4 mm by 3.4 mm by 1.1 mm, this MOSFET offers excellent thermal performance with a maximum power dissipation rating of 100 W and operational temperature range from -55°C to 175°C.
Featuring a low conduction resistance of 8.04 mΩ and a typical gate charge of 24 nC at 4 V gate voltage, the ISZ230N10NM6ATMA1 ensures efficient switching and minimal power loss. Its forward voltage rating of 1 V and maximum gate-source voltage of 20 V contribute to stability and reliability during operation.
This device supports industrial design needs where low conduction and switching losses are critical. It has a high avalanche energy rating and is RoHS compliant, aligning with modern environmental standards.
Optimized for high switching frequency industrial power systems. Low conduction and switching losses enhance energy efficiency. High avalanche energy rating improves durability under transient conditions. Compact TSDSON package suitable for space-constrained designs.
Wide operational temperature range for harsh environments. RoHS compliant and environmentally friendly design. Ideal for telecom, server power supplies, solar energy systems, power tools, and drone applications. Explore more Infineon semiconductor components and discrete MOSFET solutions in the Electronics & Electricals category on EnvMart.
Explore more products in our MOSFETs category.
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Frequently Asked Questions
The maximum continuous drain current for the ISZ230N10NM6ATMA1 is 31 A.
This model has a maximum drain-source voltage rating of 100 V.
The dimensions of the TSDSON package are 3.4 mm in length, 3.4 mm in height, and 1.1 mm in width.
It operates reliably within a temperature range of -55°C to 175°C.
The maximum power dissipation for the ISZ230N10NM6ATMA1 is rated at 100 W.
The typical gate charge at a 4 V gate voltage is 24 nC.
The maximum conduction resistance is 8.04 mΩ, which helps reduce losses and improve efficiency.
This MOSFET is designed for applications such as telecom power supplies, server power management, solar inverters, power tools, and drones.
The maximum gate-source voltage for this model is 20 V.
Yes, the ISZ230N10NM6ATMA1 is RoHS compliant, aligning with modern environmental standards.
It supports surface mounting, as it is encapsulated in an 8-pin TSDSON package.
The forward voltage rating for the ISZ230N10NM6ATMA1 is 1 V.
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