Infineon ISP Type P-Channel MOSFET 990 mA 100 V Enhancement Mode SOT-223 Package ISP20EP10LMXTSA1

Infineon ISP20EP10LMXTSA1 is a P-Channel MOSFET featuring a maximum continuous drain current of 990 mA and a maximum drain-source voltage rating of 100 V in an industry-standard SOT-223 surface mount package. It operates in enhancement mode and includes 3 pins, making it suitable for compact PCB layouts.

This device achieves low on-state resistance of 2 ohms, contributing to improved efficiency and reduced thermal dissipation. Its typical gate charge of 3.5 nC at a gate-source voltage of 20 V facilitates fast switching, vital for high-frequency power control circuits.

Designed for robust industrial and commercial use, the MOSFET handles operating temperatures from -55°C to 175°C, making it reliable across a wide range of environments and applications such as battery management systems, load switches, and reverse polarity protection.

The forward voltage drop of 1.2 V ensures efficient current conduction, while the maximum power dissipation capability of 4.2 W supports medium power operations. The SOT-223 package dimensions (Height 6.7 mm, Length 7.3 mm, Width 1.8 mm) conform to an industry standard footprint, ensuring ease of use in automated PCB assembly.

Its avalanche ruggedness and low gate charge enhance both durability and switching performance for industrial automation and battery management solutions. The MOSFET’s surface mount technology package supports efficient heat dissipation and high density circuit design.

High maximum continuous drain current of 990 mA ensures reliable operation. Maximum drain-source voltage of 100 V suitable for medium voltage applications. Low Rds(on) resistance of 2 ohms enhances efficiency and reduces power loss.

Compact SOT-223 surface mount package with 3 pins for easy PCB integration. Robust operating temperature range from -55°C to 175°C for demanding environments. Typical gate charge of 3.5 nC enables fast switching performance.

Maximum power dissipation of 4.2 W for moderate power applications. Forward voltage of 1.2 V supports efficient conduction. Designed for battery management, load switching, and reverse polarity protection.

This Infineon ISP P-Channel MOSFET is ideal for industrial, electronic, automotive, and power management applications requiring efficient switching and robust protection. Browse related MOSFETs and other discrete semiconductor devices on EnvMart for your project needs.