Infineon ISP Type P-Channel MOSFET, 1.29 A, 150 V Enhancement, 3-Pin SOT-223 ISP14EP15LMXTSA1

Infineon ISP14EP15LMXTSA1 is a P-Channel MOSFET transistor designed with enhancement mode and housed in a compact 3-pin SOT-223 surface mount package. It features a maximum continuous drain current rating of 1.29 amperes and a maximum drain-source voltage of 150 volts.

This device is engineered for high reliability in industrial automation and battery management applications, offering fast switching speeds and avalanche ruggedness. Its low gate charge of 11.6 nanocoulombs contributes to efficient switching, particularly at low load conditions.

The operating temperature range is wide, from -55°C to 175°C, making it suitable for demanding environments. With a maximum power dissipation of 5 watts and a drain-source resistance of 1.38 ohms, it balances performance and thermal management effectively.

The forward voltage of 1.2 volts indicates good conduction characteristics. The MOSFET is designed without automotive standards compliance, focusing on industrial and electronic component markets.

Its compact physical size with dimensions 6.1 mm length, 5.35 mm height, and 1.2 mm width allows for space-efficient PCB assembly. The SOT-223 package type is an industry-standard footprint that supports surface mounting for versatile hardware integration.

Operates with a maximum continuous drain current of 1.29 amperes. Supports a maximum drain-source voltage of 150 volts. Features an SOT-223 3-pin surface mount package. Has a low gate charge of 11.6 nanocoulombs for efficient switching.

Wide operating temperature range from -55°C to 175°C. Maximum power dissipation capacity of 5 watts. Maximum drain-source resistance of 1.38 ohms for reduced losses. Forward voltage rating of 1.2 volts. Designed for battery management and industrial automation applications.

Compact dimensions suitable for high-density PCB layouts.

This Infineon MOSFET transistor is well-suited for industrial electronics, power management modules, and embedded system designs. Its robust performance and compact form factor make it a reliable choice for efficient load switching and voltage control.

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