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Infineon MOSFET Type P, Type N-Channel, 400 A Continuous Drain Current, 1200 V Drain Source Voltage FS03MR12A6MA1BBPSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | FS03MR12A6MA1BBPSA1 |
| Maximum Operating Temperature | 150°C |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | UL 94 V0, RoHS |
| Channel Type | Type P, Type N |
| Maximum Continuous Drain Current Id | 400A |
| Maximum Drain Source Voltage Vds | 1200V |
| Maximum Drain Source Resistance Rds | 4.55mΩ |
| Typical Gate Charge Qg @ Vgs | 1.32μC |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- Compact six-pack module optimized for hybrid and electric vehicles.
- Direct cooled base plate enhances heat dissipation.
- Integrated NTC temperature sensor for reliable thermal monitoring.
- PressFIT contact technology ensures secure assembly.
- Operates reliably from -40°C to 150°C temperature range.
- Compliant with UL 94 V0 and RoHS standards.
- Optimized for electric drivetrain applications using CoolSiC automotive MOSFET technology.
- Typical gate charge of 1.32 μC at Vgs.
Product Description
Infineon FS03MR12A6MA1BBPSA1 MOSFET Type P and Type N-Channel is a high-performance power semiconductor module designed to meet the rigorous demands of electric and hybrid vehicle powertrains. Featuring a maximum continuous drain current of 400 A and a maximum drain source voltage of 1200 V, this six-pack module integrates CoolSiC automotive MOSFET technology, enabling efficient power switching and heat management.
The module is built with a compact design and incorporates a direct cooled base plate that helps dissipate heat effectively during high current operation. It also features integrated NTC temperature sensors for precise thermal monitoring, ensuring reliability under demanding conditions.
The press-fit contact technology facilitates secure and reliable connections to PCBs and cooling solutions. It operates safely across a wide temperature range from -40°C up to 150°C, suitable for automotive environments.
This power module complies with UL 94 V0 flammability standards and RoHS directives, assuring stringent safety and environmental compliance. The typical gate charge of 1.32 μC at operating voltage levels and a maximum gate source voltage of 20 V contribute to efficient switching performance.
Applications include electric drivetrain systems, power electronics in automobiles, and other demanding power conversion tasks in industrial and automotive sectors. Compact six-pack power module for hybrid and electric vehicle applications.
Direct cooled base plate for enhanced thermal performance. Integrated NTC temperature sensor for accurate thermal monitoring. PressFIT contact technology enables secure PCB and cooler assembly. Wide operating temperature range suitable for automotive environments.
Compliant with UL 94 V0 and RoHS standards for safety and environmental protection. CoolSiC automotive MOSFET technology optimized for electric drive trains. High continuous drain current of 400 A with 1200 V blocking voltage.
Explore more power modules and MOSFETs in the semiconductor category at EnvMart to find reliable components for your electronic and electrical applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 400 A.
This MOSFET has a maximum drain source voltage of 1200 V.
It operates reliably within a temperature range of -40°C to 150°C.
The module complies with UL 94 V0 and RoHS standards.
It features both Type P and Type N-channel configurations.
The typical gate charge is 1.32 μC at Vgs.
The maximum gate source voltage is 20 V.
It utilizes CoolSiC automotive MOSFET technology optimized for electric drive trains.
The maximum drain source resistance is 4.55 mΩ.
It employs press-fit contact technology for secure assembly to PCBs and cooling solutions.
The country of origin for this model is India.
It is optimized for electric drivetrain applications and power electronics in automobiles.
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